FQA160N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

80V

Gate to Source Voltage (Vgs) :

25V

Published :

2000

Rise Time :

970ns

Terminal Finish :

Tin (Sn)

Current Rating :

160A

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

QFET®

RoHS Status :

ROHS3 Compliant

Height :

18.9mm

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Length :

15.8mm

Mounting Type :

Through Hole

Fall Time (Typ) :

410 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

85 ns

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

640A

Rds On (Max) @ Id, Vgs :

7m Ω @ 80A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Turn-Off Delay Time :

260 ns

Power Dissipation-Max :

375W Tc

ECCN Code :

EAR99

Number of Elements :

1

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 25V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Voltage - Rated DC :

80V

Drain-source On Resistance-Max :

0.007Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5mm

Packaging :

Tube

Weight :

6.401g

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Terminations :

3

Factory Lead Time :

10 Weeks

Continuous Drain Current (ID) :

160A

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation :

375W

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ