FQA160N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

15.8mm

Height :

18.9mm

Factory Lead Time :

10 Weeks

Lead Free :

Lead Free

FET Type :

N-Channel

Transistor Element Material :

SILICON

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

640A

JESD-609 Code :

e3

Power Dissipation :

375W

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation-Max :

375W Tc

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Weight :

6.401g

Rise Time :

970ns

Element Configuration :

Single

Qualification Status :

Not Qualified

Voltage - Rated DC :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Elements :

1

Published :

2000

Width :

5mm

ECCN Code :

EAR99

Mounting Type :

Through Hole

Turn On Delay Time :

85 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

7m Ω @ 80A, 10V

Fall Time (Typ) :

410 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

160A

Drain to Source Breakdown Voltage :

80V

Turn-Off Delay Time :

260 ns

Number of Pins :

3

Series :

QFET®

Vgs (Max) :

±25V

Packaging :

Tube

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 25V

Gate to Source Voltage (Vgs) :

25V

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.007Ohm

Operating Temperature :

-55°C~175°C TJ

Current Rating :

160A