FQA10N80C-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Fall Time (Typ) :

80 ns

Number of Pins :

3

Number of Elements :

1

Factory Lead Time :

4 Weeks

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Pulsed Drain Current-Max (IDM) :

40A

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Power Dissipation :

240W

Lead Free :

Lead Free

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Number of Terminations :

3

Mounting Type :

Through Hole

Rise Time :

130ns

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

5V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Series :

QFET®

Avalanche Energy Rating (Eas) :

920 mJ

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Length :

15.8mm

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Turn On Delay Time :

50 ns

Element Configuration :

Single

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Height :

18.9mm

Weight :

6.401g

Transistor Element Material :

SILICON

Package / Case :

TO-3P-3, SC-65-3

Continuous Drain Current (ID) :

10A

Turn-Off Delay Time :

90 ns

Power Dissipation-Max :

240W Tc

Width :

5mm

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

800V