FQA11N90C
- Mfr.Part #
- FQA11N90C
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 11A TO3P
- Stock
- 19,917
- In Stock :
- 19,917
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Avalanche Energy Rating (Eas) :
- 960 mJ
- Number of Pins :
- 3
- Rise Time :
- 130ns
- Published :
- 2007
- Vgs (Max) :
- ±30V
- Voltage - Rated DC :
- 900V
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Series :
- QFET®
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 300W Tc
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 11A
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5.5A, 10V
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 44A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 85 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Breakdown Voltage :
- 900V
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 3290pF @ 25V
- Turn-Off Delay Time :
- 130 ns
- Power Dissipation :
- 300W
- Current Rating :
- 11A
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Package / Case :
- TO-3P-3, SC-65-3
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FQA11N90C

N-Channel Tube 1.1 Ω @ 5.5A, 10V ±30V 3290pF @ 25V 80nC @ 10V TO-3P-3, SC-65-3
FQA11N90C Description
The FQA11N90C is a 900v N-channel QFET? enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology FQA11N90C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This FQA11N90C is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA11N90C Features
-
11A, 900V, RDS(on) = 1.1Ω(Max.) @VGS = 10 V, ID = 5.5A
-
Low gate charge ( Typ. 60nC)
-
Low Crss ( Typ. 23pF)
-
100% avalanche tested
-
RoHS compliant
FQA11N90C Applications
-
Desktop PC
-
AC-DC Merchant Power Supply - Desktop PC
-
Switched Mode Power Supplies
-
Active Power Factor Correction (PFC)
-
Electronic Lamp Ballasts
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