FQA11N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

44A

Avalanche Energy Rating (Eas) :

960 mJ

Voltage - Rated DC :

900V

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Element Configuration :

Single

Current Rating :

11A

Packaging :

Tube

Fall Time (Typ) :

85 ns

Turn-Off Delay Time :

130 ns

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5.5A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2007

Drain to Source Breakdown Voltage :

900V

Power Dissipation-Max :

300W Tc

Number of Terminations :

3

Power Dissipation :

300W

Rise Time :

130ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

11A

Transistor Application :

SWITCHING

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-3P-3, SC-65-3

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Number of Elements :

1