FQA11N90C

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Mfr.Part #
FQA11N90C
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 900V 11A TO3P
Stock
19,917
In Stock :
19,917

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
11A
FET Type :
N-Channel
Mount :
Through Hole
Number of Terminations :
3
Vgs (Max) :
±30V
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Published :
2007
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5.5A, 10V
Rise Time :
130ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
Power Dissipation :
300W
Series :
QFET®
Number of Pins :
3
Pulsed Drain Current-Max (IDM) :
44A
Transistor Element Material :
SILICON
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-3P-3, SC-65-3
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
11A
Gate to Source Voltage (Vgs) :
30V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
85 ns
Drain to Source Breakdown Voltage :
900V
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
3290pF @ 25V
Avalanche Energy Rating (Eas) :
960 mJ
Power Dissipation-Max :
300W Tc
ECCN Code :
EAR99
RoHS Status :
RoHS Compliant
Turn-Off Delay Time :
130 ns
Voltage - Rated DC :
900V
Datasheets
FQA11N90C
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA11N90C from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-3P-3, SC-65-3, FQA11N90C pinout, FQA11N90C datasheet PDF, FQA11N90C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA11N90C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA11N90C


N-Channel Tube 1.1 Ω @ 5.5A, 10V ±30V 3290pF @ 25V 80nC @ 10V TO-3P-3, SC-65-3

FQA11N90C Description


The FQA11N90C is a 900v N-channel QFET? enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology FQA11N90C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This FQA11N90C is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.



FQA11N90C Features


  • 11A, 900V, RDS(on) = 1.1Ω(Max.) @VGS = 10 V, ID = 5.5A

  • Low gate charge ( Typ. 60nC)

  • Low Crss ( Typ. 23pF)

  • 100% avalanche tested

  • RoHS compliant



FQA11N90C Applications


  • Desktop PC

  • AC-DC Merchant Power Supply - Desktop PC

  • Switched Mode Power Supplies

  • Active Power Factor Correction (PFC)

  • Electronic Lamp Ballasts


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