FQA11N90C

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Mfr.Part #
FQA11N90C
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 900V 11A TO3P
Stock
19,917
In Stock :
19,917

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
11A
Series :
QFET®
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Current Rating :
11A
Power Dissipation-Max :
300W Tc
Fall Time (Typ) :
85 ns
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
RoHS Compliant
Number of Terminations :
3
Voltage - Rated DC :
900V
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
44A
Vgs (Max) :
±30V
Power Dissipation :
300W
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rise Time :
130ns
Number of Pins :
3
Drain to Source Breakdown Voltage :
900V
Published :
2007
Mount :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
5V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
3290pF @ 25V
Gate to Source Voltage (Vgs) :
30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Avalanche Energy Rating (Eas) :
960 mJ
Package / Case :
TO-3P-3, SC-65-3
FET Type :
N-Channel
Turn-Off Delay Time :
130 ns
Datasheets
FQA11N90C
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA11N90C from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-3P-3, SC-65-3, FQA11N90C pinout, FQA11N90C datasheet PDF, FQA11N90C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA11N90C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA11N90C


N-Channel Tube 1.1 Ω @ 5.5A, 10V ±30V 3290pF @ 25V 80nC @ 10V TO-3P-3, SC-65-3

FQA11N90C Description


The FQA11N90C is a 900v N-channel QFET? enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology FQA11N90C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This FQA11N90C is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.



FQA11N90C Features


  • 11A, 900V, RDS(on) = 1.1Ω(Max.) @VGS = 10 V, ID = 5.5A

  • Low gate charge ( Typ. 60nC)

  • Low Crss ( Typ. 23pF)

  • 100% avalanche tested

  • RoHS compliant



FQA11N90C Applications


  • Desktop PC

  • AC-DC Merchant Power Supply - Desktop PC

  • Switched Mode Power Supplies

  • Active Power Factor Correction (PFC)

  • Electronic Lamp Ballasts


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