FQA11N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Avalanche Energy Rating (Eas) :

960 mJ

Number of Pins :

3

Rise Time :

130ns

Published :

2007

Vgs (Max) :

±30V

Voltage - Rated DC :

900V

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Series :

QFET®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Qualification Status :

Not Qualified

Power Dissipation-Max :

300W Tc

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

11A

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5.5A, 10V

Lead Free :

Lead Free

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

44A

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Fall Time (Typ) :

85 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Breakdown Voltage :

900V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Turn-Off Delay Time :

130 ns

Power Dissipation :

300W

Current Rating :

11A

Number of Terminations :

3

Mounting Type :

Through Hole

Package / Case :

TO-3P-3, SC-65-3

Operating Mode :

ENHANCEMENT MODE