FQA10N60C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

730m Ω @ 5A, 10V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

700 mJ

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Pin Count :

3

Power Dissipation-Max :

192W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Drain to Source Voltage (Vdss) :

600V

Pulsed Drain Current-Max (IDM) :

40A

Input Capacitance (Ciss) (Max) @ Vds :

2.04pF @ 25V

Drain Current-Max (Abs) (ID) :

10A

Series :

QFET®

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

DS Breakdown Voltage-Min :

600V

Mounting Type :

Through Hole

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Vgs (Max) :

±30V

Number of Terminations :

3

Reach Compliance Code :

Unknown

Package / Case :

TO-3P-3, SC-65-3

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.73Ohm