FQA12N60
- Mfr.Part #
- FQA12N60
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 12A TO3P
- Stock
- 5,742
- In Stock :
- 5,742
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Surface Mount :
- No
- Pbfree Code :
- yes
- Series :
- QFET®
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Terminal Finish :
- MATTE TIN
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 12A
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Power Dissipation-Max :
- 240W Tc
- Drain-source On Resistance-Max :
- 0.7Ohm
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.9pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 48A
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Package / Case :
- TO-3P-3, SC-65-3
- Packaging :
- Tube
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Avalanche Energy Rating (Eas) :
- 790 mJ
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 600V
- Qualification Status :
- COMMERCIAL
- Drain to Source Voltage (Vdss) :
- 600V
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 6A, 10V
- Datasheets
- FQA12N60

N-Channel Tube 700m Ω @ 6A, 10V ±30V 1.9pF @ 25V 54nC @ 10V 600V TO-3P-3, SC-65-3
FQA12N60 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 790 mJ.The maximum input capacitance of this device is 1.9pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 12A.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
FQA12N60 Features
the avalanche energy rating (Eas) is 790 mJ
based on its rated peak drain current 48A.
a 600V drain to source voltage (Vdss)
FQA12N60 Applications
There are a lot of Rochester Electronics, LLC
FQA12N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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