FQA12N60

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Mfr.Part #
FQA12N60
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 600V 12A TO3P
Stock
5,742
In Stock :
5,742

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Surface Mount :
No
Pbfree Code :
yes
Series :
QFET®
Pin Count :
3
Transistor Application :
SWITCHING
Terminal Finish :
MATTE TIN
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±30V
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
12A
Peak Reflow Temperature (Cel) :
Not Applicable
Power Dissipation-Max :
240W Tc
Drain-source On Resistance-Max :
0.7Ohm
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
1.9pF @ 25V
Pulsed Drain Current-Max (IDM) :
48A
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Package / Case :
TO-3P-3, SC-65-3
Packaging :
Tube
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
12A Tc
JESD-30 Code :
R-PSFM-T3
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
Unknown
Vgs(th) (Max) @ Id :
5V @ 250μA
Avalanche Energy Rating (Eas) :
790 mJ
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
600V
Qualification Status :
COMMERCIAL
Drain to Source Voltage (Vdss) :
600V
Rds On (Max) @ Id, Vgs :
700m Ω @ 6A, 10V
Datasheets
FQA12N60
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQA12N60 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, Number of Terminations:3, FQA12N60 pinout, FQA12N60 datasheet PDF, FQA12N60 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQA12N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQA12N60


N-Channel Tube 700m Ω @ 6A, 10V ±30V 1.9pF @ 25V 54nC @ 10V 600V TO-3P-3, SC-65-3

FQA12N60 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 790 mJ.The maximum input capacitance of this device is 1.9pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 12A.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

FQA12N60 Features


the avalanche energy rating (Eas) is 790 mJ
based on its rated peak drain current 48A.
a 600V drain to source voltage (Vdss)


FQA12N60 Applications


There are a lot of Rochester Electronics, LLC
FQA12N60 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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