FQA11N90C-F109

Manufacturer :

onsemi

Product Category :

Specialized ICs

Qualification Status :

Not Qualified

FET Type :

N-Channel

Turn On Delay Time :

60 ns

Threshold Voltage :

5V

Power Dissipation :

300W

Transistor Element Material :

SILICON

Width :

5mm

Factory Lead Time :

10 Weeks

Pulsed Drain Current-Max (IDM) :

44A

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistance :

1.1Ohm

Mounting Type :

Through Hole

Weight :

6.401g

Rise Time :

130ns

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Turn-Off Delay Time :

130 ns

Transistor Application :

SWITCHING

Height :

18.9mm

Mount :

Through Hole

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Fall Time (Typ) :

85 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5.5A, 10V

Drain to Source Breakdown Voltage :

900V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

11A

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Power Dissipation-Max :

300W Tc

Contact Plating :

Tin

Length :

15.8mm

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2014

Number of Elements :

1

REACH SVHC :

No SVHC

Series :

QFET®

Avalanche Energy Rating (Eas) :

960 mJ

Element Configuration :

Single

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Package / Case :

TO-3P-3, SC-65-3

Number of Pins :

3