FQA12N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Power Dissipation-Max :

240W Tc

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

790 mJ

Pbfree Code :

yes

Number of Elements :

1

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

600V

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.7Ohm

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1.9pF @ 25V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

700m Ω @ 6A, 10V

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

12A

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

48A

Vgs (Max) :

±30V

Surface Mount :

No

Series :

QFET®

Package / Case :

TO-3P-3, SC-65-3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3