FQA12N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Pin Count :

3

Number of Elements :

1

Avalanche Energy Rating (Eas) :

790 mJ

Drain Current-Max (Abs) (ID) :

12A

Drain-source On Resistance-Max :

0.7Ohm

Mounting Type :

Through Hole

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

48A

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

700m Ω @ 6A, 10V

Drain to Source Voltage (Vdss) :

600V

DS Breakdown Voltage-Min :

600V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Application :

SWITCHING

Terminal Position :

Single

Power Dissipation-Max :

240W Tc

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Packaging :

Tube

Series :

QFET®

Package / Case :

TO-3P-3, SC-65-3

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

JESD-609 Code :

e3

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1.9pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant