FQA10N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 4.9A, 10V

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-609 Code :

e3

Package / Case :

TO-3P-3, SC-65-3

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

39.2A

Pin Count :

3

Drain Current-Max (Abs) (ID) :

9.8A

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Pbfree Code :

yes

DS Breakdown Voltage-Min :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

800V

Power Dissipation-Max :

240W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2.7pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

9.8A Tc

Terminal Position :

Single

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

920 mJ

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®