FQA10N80

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Mfr.Part #
FQA10N80
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 800V 9.8A TO3P
Stock
31,762
In Stock :
31,762

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
COMMERCIAL
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Drain Current-Max (Abs) (ID) :
9.8A
Current - Continuous Drain (Id) @ 25°C :
9.8A Tc
Vgs (Max) :
±30V
Transistor Element Material :
SILICON
Terminal Position :
Single
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
71nC @ 10V
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
Not Applicable
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Package / Case :
TO-3P-3, SC-65-3
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 250μA
Series :
QFET®
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
800V
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
39.2A
Pin Count :
3
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
1.05 Ω @ 4.9A, 10V
Mounting Type :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
2.7pF @ 25V
DS Breakdown Voltage-Min :
800V
Terminal Finish :
MATTE TIN
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
920 mJ
Power Dissipation-Max :
240W Tc
Reach Compliance Code :
Unknown
Number of Terminations :
3
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQA10N80 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, FQA10N80 pinout, FQA10N80 datasheet PDF, FQA10N80 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQA10N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQA10N80


N-Channel Tube 1.05 Ω @ 4.9A, 10V ±30V 2.7pF @ 25V 71nC @ 10V 800V TO-3P-3, SC-65-3

FQA10N80 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 920 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2.7pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 9.8A.Peak drain current is 39.2A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FQA10N80 Features


the avalanche energy rating (Eas) is 920 mJ
based on its rated peak drain current 39.2A.
a 800V drain to source voltage (Vdss)


FQA10N80 Applications


There are a lot of Rochester Electronics, LLC
FQA10N80 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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