FQA10N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

800V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

920 mJ

Terminal Position :

Single

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Pin Count :

3

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Peak Reflow Temperature (Cel) :

Not Applicable

Number of Terminations :

3

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

40A

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

10A

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Packaging :

Tube

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2.8pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

240W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

DS Breakdown Voltage-Min :

800V

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-3P-3, SC-65-3