FQA10N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Terminal Finish :

MATTE TIN

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Avalanche Energy Rating (Eas) :

920 mJ

Power Dissipation-Max :

240W Tc

Drain to Source Voltage (Vdss) :

800V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

DS Breakdown Voltage-Min :

800V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

2.8pF @ 25V

Pulsed Drain Current-Max (IDM) :

40A

Packaging :

Tube

Pbfree Code :

yes

JESD-609 Code :

e3

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

10A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Package / Case :

TO-3P-3, SC-65-3

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Series :

QFET®

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Terminal Position :

Single