FQA10N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Pin Count :

3

Avalanche Energy Rating (Eas) :

700 mJ

Drain-source On Resistance-Max :

0.73Ohm

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2.04pF @ 25V

DS Breakdown Voltage-Min :

600V

Number of Elements :

1

Package / Case :

TO-3P-3, SC-65-3

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

10A

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

730m Ω @ 5A, 10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

Not Applicable

Mounting Type :

Through Hole

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

40A

Packaging :

Tube

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

192W Tc

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Series :

QFET®

Surface Mount :

No

Drain to Source Voltage (Vdss) :

600V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V