FQA10N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

40A

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

10A Tc

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Terminal Position :

Single

Packaging :

Tube

Series :

QFET®

Rds On (Max) @ Id, Vgs :

730m Ω @ 5A, 10V

Power Dissipation-Max :

192W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

JESD-609 Code :

e3

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

700 mJ

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

600V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2.04pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

10A

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Peak Reflow Temperature (Cel) :

Not Applicable

Drain to Source Voltage (Vdss) :

600V

Drain-source On Resistance-Max :

0.73Ohm

Package / Case :

TO-3P-3, SC-65-3

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

Not Applicable