FJN3310RTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Surface Mount :

No

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100nA ICBO

Power - Max :

300mW

Qualification Status :

COMMERCIAL

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Application :

SWITCHING

Current - Collector (Ic) (Max) :

100mA

Pin Count :

3

Resistor - Base (R1) :

10 k Ω

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Voltage - Collector Emitter Breakdown (Max) :

40V

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN - Pre-Biased

Frequency - Transition :

250MHz

JESD-30 Code :

O-PBCY-T3

Number of Elements :

1

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

Not Applicable

Pbfree Code :

yes

Additional Feature :

BUILT IN BIAS RESISTOR

Transition Frequency :

250MHz

Packaging :

Tape and Box (TB)