FJN3301RTA
- Mfr.Part #
- FJN3301RTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 5,264
- In Stock :
- 5,264
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 100mA
- Element Configuration :
- Single
- Transition Frequency :
- 250MHz
- Max Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- hFE Min :
- 20
- Published :
- 2007
- HTS Code :
- 8541.21.00.95
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- 50V
- Current Rating :
- 100mA
- Weight :
- 240mg
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10mA 5V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 50V
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Frequency - Transition :
- 250MHz
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 10V
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Max Collector Current :
- 100mA
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 300mW
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FJN3301RTA

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
FJN3301RTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 500μA, 10mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
FJN3301RTA Features
the DC current gain for this device is 20 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 250MHz
FJN3301RTA Applications
There are a lot of ON Semiconductor
FJN3301RTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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