FJN3301RTA
- Mfr.Part #
- FJN3301RTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 14,887
- In Stock :
- 14,887
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 300mW
- Published :
- 2007
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 50V
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Terminations :
- 3
- hFE Min :
- 20
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Continuous Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 10V
- Transition Frequency :
- 250MHz
- HTS Code :
- 8541.21.00.95
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 240mg
- Max Breakdown Voltage :
- 50V
- Factory Lead Time :
- 6 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Frequency - Transition :
- 250MHz
- Current Rating :
- 100mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10mA 5V
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 300mW
- Datasheets
- FJN3301RTA

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
FJN3301RTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 500μA, 10mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
FJN3301RTA Features
the DC current gain for this device is 20 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 250MHz
FJN3301RTA Applications
There are a lot of ON Semiconductor
FJN3301RTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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