FJN3301RTA

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Mfr.Part #
FJN3301RTA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 50V 0.1A TO92-3
Stock
14,887
In Stock :
14,887

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Tin (Sn)
Transistor Element Material :
SILICON
Power Dissipation :
300mW
Published :
2007
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Terminal Position :
BOTTOM
Mount :
Through Hole
Collector Base Voltage (VCBO) :
50V
Operating Temperature :
150°C TJ
Voltage - Rated DC :
50V
Additional Feature :
BUILT-IN BIAS RESISTOR RATIO IS 1
Pbfree Code :
yes
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
50V
Number of Terminations :
3
hFE Min :
20
Qualification Status :
Not Qualified
Number of Elements :
1
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500μA, 10mA
Max Collector Current :
100mA
Element Configuration :
Single
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Continuous Collector Current :
100mA
Polarity/Channel Type :
NPN
Emitter Base Voltage (VEBO) :
10V
Transition Frequency :
250MHz
HTS Code :
8541.21.00.95
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
240mg
Max Breakdown Voltage :
50V
Factory Lead Time :
6 Weeks
Current - Collector Cutoff (Max) :
100nA ICBO
JESD-609 Code :
e3
Frequency - Transition :
250MHz
Current Rating :
100mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Collector Emitter Breakdown Voltage :
50V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Packaging :
Tape and Box (TB)
RoHS Status :
RoHS Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 10mA 5V
Mounting Type :
Through Hole
Max Power Dissipation :
300mW
Datasheets
FJN3301RTA
Introducing Transistors - Bipolar (BJT) - Single onsemi FJN3301RTA from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, FJN3301RTA pinout, FJN3301RTA datasheet PDF, FJN3301RTA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJN3301RTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJN3301RTA


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

FJN3301RTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 500μA, 10mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 100mA volts at its maximum.

FJN3301RTA Features


the DC current gain for this device is 20 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 250MHz


FJN3301RTA Applications


There are a lot of ON Semiconductor
FJN3301RTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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