FJN3303FBU
- Mfr.Part #
- FJN3303FBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO92-3
- Stock
- 37,095
- In Stock :
- 37,095
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Base Part Number :
- FJN3303
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Max Collector Current :
- 1.5A
- Power - Max :
- 650mW
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- hFE Min :
- 14
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- Factory Lead Time :
- 6 Weeks
- Turn On Time-Max (ton) :
- 1100ns
- Emitter Base Voltage (VEBO) :
- 9V
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 400V
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 4700ns
- HTS Code :
- 8541.29.00.95
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Frequency - Transition :
- 4MHz
- Collector Emitter Voltage (VCEO) :
- 400V
- Weight :
- 179mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transition Frequency :
- 4MHz
- Configuration :
- Single
- Max Power Dissipation :
- 650mW
- Datasheets
- FJN3303FBU
FJN3303FBU Documents
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NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
FJN3303FBU Overview
This device has a DC current gain of 14 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 9V to achieve high efficiency.In this part, there is a transition frequency of 4MHz.The maximum collector current is 1.5A volts.
FJN3303FBU Features
the DC current gain for this device is 14 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJN3303FBU Applications
There are a lot of ON Semiconductor
FJN3303FBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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