FJN3303FBU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

1.5A

Mounting Type :

Through Hole

HTS Code :

8541.29.00.95

Radiation Hardening :

No

Number of Elements :

1

hFE Min :

14

Turn On Time-Max (ton) :

1100ns

Number of Terminations :

3

Packaging :

Bulk

Turn Off Time-Max (toff) :

4700ns

Transition Frequency :

4MHz

Transistor Type :

NPN

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

10μA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

400V

Weight :

179mg

Pbfree Code :

yes

Power - Max :

650mW

Factory Lead Time :

6 Weeks

Collector Emitter Breakdown Voltage :

400V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Number of Pins :

3

Frequency - Transition :

4MHz

Collector Base Voltage (VCBO) :

700V

JESD-609 Code :

e3

Max Power Dissipation :

650mW

Operating Temperature :

150°C TJ

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

Configuration :

Single

Emitter Base Voltage (VEBO) :

9V

DC Current Gain (hFE) (Min) @ Ic, Vce :

14 @ 500mA 2V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Base Part Number :

FJN3303

Vce Saturation (Max) @ Ib, Ic :

3V @ 500mA, 1.5A