FJN3303RBU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

250MHz

Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Mount :

Through Hole

Continuous Collector Current :

100mA

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

36 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Base Part Number :

FJN3303

Number of Pins :

3

Transistor Type :

NPN - Pre-Biased

Emitter Base Voltage (VEBO) :

10V

Mounting Type :

Through Hole

Voltage - Rated DC :

50V

Resistor - Base (R1) :

22 k Ω

Max Power Dissipation :

300mW

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Polarity :

NPN

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

22 k Ω

Current Rating :

100mA

Max Collector Current :

100mA

Packaging :

Bulk

Element Configuration :

Single

hFE Min :

56

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-55°C