FJN3301RBU

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Mfr.Part #
FJN3301RBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 50V 0.1A TO92-3
Stock
47,786
In Stock :
47,786

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
50V
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Weight :
178.2mg
hFE Min :
20
Current - Collector Cutoff (Max) :
100nA ICBO
Emitter Base Voltage (VEBO) :
10V
Collector Emitter Voltage (VCEO) :
50V
Collector Emitter Breakdown Voltage :
50V
Number of Pins :
3
Max Power Dissipation :
300mW
Packaging :
Bulk
Current Rating :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 10mA 5V
Voltage - Rated DC :
50V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Max Collector Current :
100mA
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500μA, 10mA
Lead Free :
Lead Free
Mount :
Through Hole
Transistor Type :
NPN
RoHS Status :
RoHS Compliant
Continuous Collector Current :
100mA
Power Dissipation :
300mW
Frequency - Transition :
250MHz
Operating Temperature :
150°C TJ
Datasheets
FJN3301RBU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJN3301RBU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:150°C TJ, FJN3301RBU pinout, FJN3301RBU datasheet PDF, FJN3301RBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJN3301RBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJN3301RBU


NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

FJN3301RBU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 500μA, 10mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 100mA volts.

FJN3301RBU Features


the DC current gain for this device is 20 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA


FJN3301RBU Applications


There are a lot of ON Semiconductor
FJN3301RBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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