FJN3301RTA
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- Mfr.Part #
- FJN3301RTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 37,757
- In Stock ：
- 37,757
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 50V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Element Configuration :
- Single
- Frequency - Transition :
- 250MHz
- Collector Base Voltage (VCBO) :
- 50V
- Weight :
- 240mg
- Mounting Type :
- Through Hole
- Power Dissipation :
- 300mW
- Number of Pins :
- 3
- hFE Min :
- 20
- Transistor Application :
- SWITCHING
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Published :
- 2007
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Factory Lead Time :
- 6 Weeks
- Emitter Base Voltage (VEBO) :
- 10V
- Continuous Collector Current :
- 100mA
- Transition Frequency :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- HTS Code :
- 8541.21.00.95
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Current Rating :
- 100mA
- Voltage - Rated DC :
- 50V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10mA 5V
- Datasheets
- FJN3301RTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
FJN3301RTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 500μA, 10mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
FJN3301RTA Features
the DC current gain for this device is 20 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 250MHz
FJN3301RTA Applications
There are a lot of ON Semiconductor
FJN3301RTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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