FJN3303FTA
- Mfr.Part #
- FJN3303FTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO92-3
- Stock
- 5
- In Stock :
- 5
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Max Collector Current :
- 1.5A
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 400V
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Power Dissipation :
- 650mW
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 240mg
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Base Part Number :
- FJN3303
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Base Voltage (VCBO) :
- 700V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 2V
- Packaging :
- Tape and Box (TB)
- hFE Min :
- 14
- Transition Frequency :
- 4MHz
- Max Power Dissipation :
- 650mW
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 400V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 9V
- Polarity/Channel Type :
- NPN
- Frequency :
- 4MHz
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 400V
- Number of Elements :
- 1
- Turn Off Time-Max (toff) :
- 4700ns
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- NPN
- Datasheets
- FJN3303FTA
FJN3303FTA Documents

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
FJN3303FTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 14 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 500mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Parts of this part have transition frequencies of 4MHz.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 1.5A volts.
FJN3303FTA Features
the DC current gain for this device is 14 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJN3303FTA Applications
There are a lot of ON Semiconductor
FJN3303FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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