FJN3303FTA
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- Mfr.Part #
- FJN3303FTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO92-3
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mount :
- Through Hole
- Number of Elements :
- 1
- Turn Off Time-Max (toff) :
- 4700ns
- Collector Emitter Breakdown Voltage :
- 400V
- Weight :
- 240mg
- Transition Frequency :
- 4MHz
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- FJN3303
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 1.5A
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 400V
- Packaging :
- Tape and Box (TB)
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 9V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 650mW
- Max Breakdown Voltage :
- 400V
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- hFE Min :
- 14
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 650mW
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Frequency :
- 4MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 2V
- Datasheets
- FJN3303FTA
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
FJN3303FTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 14 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 500mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Parts of this part have transition frequencies of 4MHz.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 1.5A volts.
FJN3303FTA Features
the DC current gain for this device is 14 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJN3303FTA Applications
There are a lot of ON Semiconductor
FJN3303FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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