FDS3912

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Mfr.Part #
FDS3912
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET 2N-CH 100V 3A 8SOIC
Stock
20,990
In Stock :
20,990

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Rise Time :
2ns
Max Power Dissipation :
900mW
Voltage - Rated DC :
100V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Length :
5mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Pins :
8
Input Capacitance (Ciss) (Max) @ Vds :
632pF @ 50V
Current Rating :
3A
FET Feature :
Logic Level Gate
Height :
1.5mm
FET Type :
2 N-Channel (Dual)
Operating Temperature :
-55°C~175°C TJ
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
125m Ω @ 3A, 10V
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
2W
Fall Time (Typ) :
4.5 ns
Continuous Drain Current (ID) :
3A
Mount :
Surface Mount
RoHS Status :
RoHS Compliant
Number of Elements :
2
Turn On Delay Time :
8.5 ns
Drain to Source Breakdown Voltage :
100V
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Width :
4mm
Element Configuration :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Turn-Off Delay Time :
23 ns
Weight :
230.4mg
Datasheets
FDS3912
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDS3912 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, FDS3912 pinout, FDS3912 datasheet PDF, FDS3912 amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDS3912 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS3912


FDS3912 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDS3912 Description


These N-Channel MOSFETs were created with the goal of enhancing the overall performance of DC/DC converters with either synchronous or traditional switching PWM controllers. In comparison to other MOSFETs with equivalent RDS(ON) parameters, these MOSFETs have faster switching and a lower gate charge. As a result, driving a MOSFET becomes simpler and safer (even at very high frequencies), and designs for DC/DC power supplies become more efficient overall.



FDS3912 Features


  • brisk switching rate

  • Affordable gate fee (14 nC typ)

  • Highly efficient trench technology for incredibly low RDS (ON)

  • Capability of managing large currents and powers



FDS3912 Applications


This product is all-purpose and appropriate for a wide range of use


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