FDS3590

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

6.5A

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Number of Terminations :

8

Rise Time :

8ns

Terminal Position :

Dual

Transistor Application :

SWITCHING

FET Type :

N-Channel

Transistor Element Material :

SILICON

Height :

1.5mm

Series :

PowerTrench®

Power Dissipation-Max :

2.5W Ta

Power Dissipation :

2.5W

Factory Lead Time :

9 Weeks

Length :

5mm

Turn On Delay Time :

11 ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V

Drain Current-Max (Abs) (ID) :

6.4A

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Continuous Drain Current (ID) :

6.5A

Width :

4mm

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 40V

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Vgs (Max) :

±20V

Fall Time (Typ) :

12 ns

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

39m Ω @ 6.5A, 10V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Weight :

130mg

Drain to Source Breakdown Voltage :

80V

Turn-Off Delay Time :

26 ns

ECCN Code :

EAR99

Number of Pins :

8

Number of Elements :

1

Resistance :

39mOhm

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Voltage - Rated DC :

80V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V