FDS3670

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Mfr.Part #
FDS3670
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 100V 6.3A 8SOIC
Stock
7,242
In Stock :
7,242

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
6.3A Ta
Number of Terminations :
8
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Transistor Element Material :
SILICON
Surface Mount :
yes
JESD-609 Code :
e3
JESD-30 Code :
R-PDSO-G8
Series :
PowerTrench®
Peak Reflow Temperature (Cel) :
260
DS Breakdown Voltage-Min :
100V
Reach Compliance Code :
Unknown
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Terminal Form :
Gull wing
Input Capacitance (Ciss) (Max) @ Vds :
2.49pF @ 50V
FET Type :
N-Channel
Terminal Position :
Dual
Vgs(th) (Max) @ Id :
4V @ 250µA
Pin Count :
8
Qualification Status :
COMMERCIAL
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Number of Elements :
1
Drain to Source Voltage (Vdss) :
100V
Rds On (Max) @ Id, Vgs :
32m Ω @ 6.3A, 10V
Terminal Finish :
MATTE TIN
Drain Current-Max (Abs) (ID) :
6.3A
Power Dissipation-Max :
2.5W Ta
Drain-source On Resistance-Max :
0.03Ohm
Datasheets
FDS3670
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS3670 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, FDS3670 pinout, FDS3670 datasheet PDF, FDS3670 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS3670 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS3670


N-Channel Tape & Reel (TR) 32m Ω @ 6.3A, 10V ±20V 2.49pF @ 50V 80nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)

FDS3670 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.49pF @ 50V.There is no drain current on this device since the maximum continuous current it can conduct is 6.3A.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).

FDS3670 Features


a 100V drain to source voltage (Vdss)


FDS3670 Applications


There are a lot of Rochester Electronics, LLC
FDS3670 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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