FDS3670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.03Ohm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Drain Current-Max (Abs) (ID) :

6.3A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

100V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta

Current - Continuous Drain (Id) @ 25°C :

6.3A Ta

Number of Terminations :

8

Vgs (Max) :

±20V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PDSO-G8

FET Type :

N-Channel

Pin Count :

8

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Reach Compliance Code :

Unknown

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

32m Ω @ 6.3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2.49pF @ 50V

Series :

PowerTrench®