FDS3170N7

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Mfr.Part #
FDS3170N7
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 100V 6.7A 8SO
Stock
14,204
In Stock :
14,204

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Transistor Application :
SWITCHING
Pbfree Code :
yes
Surface Mount :
yes
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
2.714pF @ 50V
Series :
PowerTrench®
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Case Connection :
DRAIN
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
360 mJ
Mounting Type :
Surface Mount
Drain-source On Resistance-Max :
0.026ohm
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
100V
Number of Terminations :
8
Pulsed Drain Current-Max (IDM) :
60A
JESD-30 Code :
R-PDSO-G8
Rds On (Max) @ Id, Vgs :
26m Ω @ 6.7A, 10V
Terminal Finish :
NICKEL PALLADIUM GOLD
Vgs(th) (Max) @ Id :
4V @ 250µA
Pin Count :
8
Drain Current-Max (Abs) (ID) :
6.7A
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
6.7A Ta
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Qualification Status :
COMMERCIAL
FET Type :
N-Channel
Number of Elements :
1
Terminal Position :
Dual
JESD-609 Code :
e4
Terminal Form :
Gull wing
Power Dissipation-Max :
3W Ta
Transistor Element Material :
SILICON
Reach Compliance Code :
Unknown
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS3170N7 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS3170N7 pinout, FDS3170N7 datasheet PDF, FDS3170N7 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS3170N7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS3170N7


N-Channel Tape & Reel (TR) 26m Ω @ 6.7A, 10V ±20V 2.714pF @ 50V 77nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)

FDS3170N7 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 360 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.714pF @ 50V.There is no drain current on this device since the maximum continuous current it can conduct is 6.7A.There is a peak drain current of 60A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).

FDS3170N7 Features


the avalanche energy rating (Eas) is 360 mJ
based on its rated peak drain current 60A.
a 100V drain to source voltage (Vdss)


FDS3170N7 Applications


There are a lot of Rochester Electronics, LLC
FDS3170N7 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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