FDS3170N7

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Avalanche Energy Rating (Eas) :

360 mJ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pin Count :

8

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

60A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

PowerTrench®

DS Breakdown Voltage-Min :

100V

Drain Current-Max (Abs) (ID) :

6.7A

Terminal Finish :

NICKEL PALLADIUM GOLD

Case Connection :

DRAIN

Surface Mount :

yes

Power Dissipation-Max :

3W Ta

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

26m Ω @ 6.7A, 10V

FET Type :

N-Channel

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.026ohm

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

JESD-609 Code :

e4

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2.714pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

JESD-30 Code :

R-PDSO-G8

Vgs (Max) :

±20V