FDS3512

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

9 Weeks

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Turn On Delay Time :

7 ns

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

24 ns

Lead Free :

Lead Free

Terminal Position :

Dual

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Pins :

8

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Fall Time (Typ) :

4 ns

Voltage - Rated DC :

80V

Input Capacitance (Ciss) (Max) @ Vds :

634pF @ 40V

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta

ECCN Code :

EAR99

Pbfree Code :

yes

Current Rating :

4A

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

3ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

70m Ω @ 4A, 10V

Drain Current-Max (Abs) (ID) :

4A

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Continuous Drain Current (ID) :

4A

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.07Ohm

Drain to Source Breakdown Voltage :

80V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Terminal Form :

Gull wing

Radiation Hardening :

No

Series :

PowerTrench®

Weight :

130mg