FDS3512
- Mfr.Part #
- FDS3512
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 4A 8SOIC
- Stock
- 3,225
- In Stock :
- 3,225
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 24 ns
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 7 ns
- Fall Time (Typ) :
- 4 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation :
- 2.5W
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 634pF @ 40V
- Mounting Type :
- Surface Mount
- Current Rating :
- 4A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Continuous Drain Current (ID) :
- 4A
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 3ns
- Mount :
- Surface Mount
- Factory Lead Time :
- 9 Weeks
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 4A, 10V
- Drain-source On Resistance-Max :
- 0.07Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Number of Terminations :
- 8
- Transistor Element Material :
- SILICON
- Weight :
- 130mg
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Power Dissipation-Max :
- 2.5W Ta
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 80V
- Drain Current-Max (Abs) (ID) :
- 4A
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 80V
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Datasheets
- FDS3512
FDS3512 Documents

N-Channel Tape & Reel (TR) 70m Ω @ 4A, 10V ±20V 634pF @ 40V 18nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS3512 Description
FDS3512 is an 80V N-Channel PowerTrench? MOSFET. This N-Channel MOSFET FDS3512 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET FDS3512 features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDS3512 Features
-
4.0 A, 80 V
-
RDS(ON) = 70 mΩ @ VGS = 10 V
-
RDS(ON) = 80 mΩ @ VGS = 6 V
-
Low gate charge (13nC typical)
-
Fast switching speed
-
High-performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
FDS3512 Applications
-
cellular phones
-
laptop computers
-
photovoltaic systems
-
wind turbines
-
shunt voltage regulator and the series voltage regulator
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