FDS3580
- Mfr.Part #
- FDS3580
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 7.6A 8SOIC
- Stock
- 437
- In Stock :
- 437
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Rise Time :
- 8ns
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 80V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ) :
- 16 ns
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 34 ns
- Power Dissipation-Max :
- 2.5W Ta
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 13 ns
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 7.6A, 10V
- FET Type :
- N-Channel
- Width :
- 3.9mm
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 11 Weeks
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Weight :
- 130mg
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Resistance :
- 29mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A Ta
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 7.6A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Power Dissipation :
- 2.5W
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Transistor Element Material :
- SILICON
- Published :
- 2000
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Length :
- 4.9mm
- Number of Elements :
- 1
- Number of Terminations :
- 8
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 1.575mm
- Voltage - Rated DC :
- 80V
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- PowerTrench®
- Pbfree Code :
- yes
- Current Rating :
- 7.6A
- Datasheets
- FDS3580
FDS3580 Documents

N-Channel Tape & Reel (TR) 29m Ω @ 7.6A, 10V ±20V 1800pF @ 25V 46nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS3580 Description
The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared with other MOSFET with similar R DS specifications, these MOSFET have faster switching speed and lower gate charge. The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.
FDS3580 Features
7.6 A, 80 V.
RDS(ON ) = 0.029 Ω @ VGS = 10 V
RDS(ON) = 0.033 Ω @ VGS = 6 V.
Low gate charge (34nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
FDS3580 Applications
This product is general usage and suitable for many different applications.
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Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
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Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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