FDS3580

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Mfr.Part #
FDS3580
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 80V 7.6A 8SOIC
Stock
437
In Stock :
437

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Terminal Position :
Dual
Rise Time :
8ns
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
80V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Fall Time (Typ) :
16 ns
Vgs (Max) :
±20V
Turn-Off Delay Time :
34 ns
Power Dissipation-Max :
2.5W Ta
Mounting Type :
Surface Mount
Turn On Delay Time :
13 ns
Rds On (Max) @ Id, Vgs :
29m Ω @ 7.6A, 10V
FET Type :
N-Channel
Width :
3.9mm
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
11 Weeks
Element Configuration :
Single
Transistor Application :
SWITCHING
Weight :
130mg
Terminal Finish :
Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Resistance :
29mOhm
Current - Continuous Drain (Id) @ 25°C :
7.6A Ta
Vgs(th) (Max) @ Id :
4V @ 250µA
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
7.6A
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
Power Dissipation :
2.5W
Mount :
Surface Mount
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Transistor Element Material :
SILICON
Published :
2000
Number of Pins :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Length :
4.9mm
Number of Elements :
1
Number of Terminations :
8
Terminal Form :
Gull wing
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Height :
1.575mm
Voltage - Rated DC :
80V
Operating Temperature :
-55°C~150°C TJ
Series :
PowerTrench®
Pbfree Code :
yes
Current Rating :
7.6A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS3580 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, FDS3580 pinout, FDS3580 datasheet PDF, FDS3580 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS3580 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS3580


N-Channel Tape & Reel (TR) 29m Ω @ 7.6A, 10V ±20V 1800pF @ 25V 46nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS3580   Description


  The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared with other MOSFET with similar R DS specifications, these MOSFET have faster switching speed and lower gate charge. The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.


FDS3580    Features

 

7.6 A, 80 V.

RDS(ON ) = 0.029 Ω @ VGS = 10 V

RDS(ON) = 0.033 Ω @ VGS = 6 V.

Low gate charge (34nC typical).

Fast switching speed.

High performance trench technology for extremely low RDS(ON).

High power and current handling capability.


FDS3580     Applications


This product is general usage and suitable for many different applications.

 



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