FDS3580

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.9mm

Height :

1.575mm

Continuous Drain Current (ID) :

7.6A

Factory Lead Time :

11 Weeks

FET Type :

N-Channel

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Radiation Hardening :

No

Series :

PowerTrench®

Fall Time (Typ) :

16 ns

Terminal Finish :

Tin (Sn)

Published :

2000

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Current Rating :

7.6A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

29m Ω @ 7.6A, 10V

Element Configuration :

Single

ECCN Code :

EAR99

Power Dissipation :

2.5W

Voltage - Rated DC :

80V

Mounting Type :

Surface Mount

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

7.6A Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

80V

Gate to Source Voltage (Vgs) :

20V

Weight :

130mg

Resistance :

29mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Rise Time :

8ns

Pbfree Code :

yes

Terminal Form :

Gull wing

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

34 ns

Number of Terminations :

8

JESD-609 Code :

e3

Vgs (Max) :

±20V

Mount :

Surface Mount

Turn On Delay Time :

13 ns

Number of Elements :

1