FDS3580

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Mfr.Part #
FDS3580
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 80V 7.6A 8SOIC
Stock
437
In Stock :
437

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Pbfree Code :
yes
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Turn On Delay Time :
13 ns
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
2.5W
Number of Pins :
8
Length :
4.9mm
Weight :
130mg
Current Rating :
7.6A
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2000
Resistance :
29mOhm
Factory Lead Time :
11 Weeks
Current - Continuous Drain (Id) @ 25°C :
7.6A Ta
Number of Terminations :
8
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
16 ns
Lead Free :
Lead Free
ECCN Code :
EAR99
Terminal Form :
Gull wing
Voltage - Rated DC :
80V
Continuous Drain Current (ID) :
7.6A
Rise Time :
8ns
Power Dissipation-Max :
2.5W Ta
Drain to Source Breakdown Voltage :
80V
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Height :
1.575mm
Terminal Finish :
Tin (Sn)
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
Terminal Position :
Dual
Series :
PowerTrench®
Radiation Hardening :
No
Width :
3.9mm
Rds On (Max) @ Id, Vgs :
29m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn-Off Delay Time :
34 ns
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Element Configuration :
Single
JESD-609 Code :
e3
Datasheets
FDS3580
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS3580 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, Number of Terminations:8, FDS3580 pinout, FDS3580 datasheet PDF, FDS3580 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS3580 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS3580


N-Channel Tape & Reel (TR) 29m Ω @ 7.6A, 10V ±20V 1800pF @ 25V 46nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS3580   Description


  The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared with other MOSFET with similar R DS specifications, these MOSFET have faster switching speed and lower gate charge. The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.


FDS3580    Features

 

7.6 A, 80 V.

RDS(ON ) = 0.029 Ω @ VGS = 10 V

RDS(ON) = 0.033 Ω @ VGS = 6 V.

Low gate charge (34nC typical).

Fast switching speed.

High performance trench technology for extremely low RDS(ON).

High power and current handling capability.


FDS3580     Applications


This product is general usage and suitable for many different applications.

 



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