FDS3670
- Mfr.Part #
- FDS3670
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 6.3A 8SOIC
- Stock
- 28,575
- In Stock :
- 28,575
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Drain Current-Max (Abs) (ID) :
- 6.3A
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 8
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.03Ohm
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta
- Pbfree Code :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- JESD-30 Code :
- R-PDSO-G8
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 100V
- Pin Count :
- 8
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.49pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Series :
- PowerTrench®
- Terminal Finish :
- MATTE TIN
- Qualification Status :
- COMMERCIAL
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 6.3A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 6.3A Ta
- Datasheets
- FDS3670
FDS3670 Documents

N-Channel Tape & Reel (TR) 32m Ω @ 6.3A, 10V ±20V 2.49pF @ 50V 80nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)
FDS3670 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.49pF @ 50V.There is no drain current on this device since the maximum continuous current it can conduct is 6.3A.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
FDS3670 Features
a 100V drain to source voltage (Vdss)
FDS3670 Applications
There are a lot of Rochester Electronics, LLC
FDS3670 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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