FDS3670
- Mfr.Part #
- FDS3670
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 6.3A 8SOIC
- Stock
- 28,575
- In Stock :
- 28,575
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminations :
- 8
- JESD-30 Code :
- R-PDSO-G8
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 6.3A, 10V
- Reach Compliance Code :
- Unknown
- Drain-source On Resistance-Max :
- 0.03Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 6.3A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.49pF @ 50V
- Surface Mount :
- yes
- Series :
- PowerTrench®
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Terminal Finish :
- MATTE TIN
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 100V
- Terminal Position :
- Dual
- Pin Count :
- 8
- Transistor Application :
- SWITCHING
- Qualification Status :
- COMMERCIAL
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 6.3A Ta
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 2.5W Ta
- Datasheets
- FDS3670

N-Channel Tape & Reel (TR) 32m Ω @ 6.3A, 10V ±20V 2.49pF @ 50V 80nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)
FDS3670 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.49pF @ 50V.There is no drain current on this device since the maximum continuous current it can conduct is 6.3A.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
FDS3670 Features
a 100V drain to source voltage (Vdss)
FDS3670 Applications
There are a lot of Rochester Electronics, LLC
FDS3670 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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