FDS3570

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±20V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Drain Current-Max (Abs) (ID) :

9A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

DS Breakdown Voltage-Min :

80V

Qualification Status :

COMMERCIAL

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

2.75pF @ 25V

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Rds On (Max) @ Id, Vgs :

20m Ω @ 9A, 10V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.02Ohm

Series :

PowerTrench®

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

80V

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE