FDS3572_NL

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

80 V

Current - Continuous Drain (Id) @ 25°C :

8.9A (Ta)

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1990 pF @ 25 V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Supplier Device Package :

8-SOIC

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

41 nC @ 10 V

FET Feature :

-

Transistor Element Material :

SILICON

Number of Terminals :

8

Drain to Source Voltage (Vdss) :

80 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

Series :

PowerTrench?

Surface Mount :

yes

Package :

Bulk

Power Dissipation (Max) :

2.5W (Ta)

Drain-source On Resistance-Max :

0.016 Ω

Manufacturer :

Rochester Electronics LLC

JESD-30 Code :

R-PDSO-G8

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

16mOhm @ 8.9A, 10V

Terminal Form :

Gull wing

Product Status :

Active

Avalanche Energy Rating (Eas) :

515 mJ