FDS3580
- Mfr.Part #
- FDS3580
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 437
- In Stock :
- 437
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 80V
- Turn-Off Delay Time :
- 34 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- Published :
- 2000
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A Ta
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Rise Time :
- 8ns
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2.5W
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 7.6A, 10V
- Pbfree Code :
- yes
- Current Rating :
- 7.6A
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Factory Lead Time :
- 11 Weeks
- Power Dissipation-Max :
- 2.5W Ta
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 80V
- Series :
- PowerTrench®
- Width :
- 3.9mm
- Number of Terminations :
- 8
- Number of Elements :
- 1
- Turn On Delay Time :
- 13 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 7.6A
- Height :
- 1.575mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Resistance :
- 29mOhm
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Application :
- SWITCHING
- Length :
- 4.9mm
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 16 ns
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Weight :
- 130mg
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Element Configuration :
- Single
- Datasheets
- FDS3580
FDS3580 Documents

N-Channel Tape & Reel (TR) 29m Ω @ 7.6A, 10V ±20V 1800pF @ 25V 46nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS3580 Description
The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared with other MOSFET with similar R DS specifications, these MOSFET have faster switching speed and lower gate charge. The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.
FDS3580 Features
7.6 A, 80 V.
RDS(ON ) = 0.029 Ω @ VGS = 10 V
RDS(ON) = 0.033 Ω @ VGS = 6 V.
Low gate charge (34nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
FDS3580 Applications
This product is general usage and suitable for many different applications.
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