FDS3580
- Mfr.Part #
- FDS3580
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 437
- In Stock :
- 437
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A Ta
- Turn On Delay Time :
- 13 ns
- Weight :
- 130mg
- Mounting Type :
- Surface Mount
- Rise Time :
- 8ns
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 11 Weeks
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 80V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Length :
- 4.9mm
- Current Rating :
- 7.6A
- Series :
- PowerTrench®
- Fall Time (Typ) :
- 16 ns
- Resistance :
- 29mOhm
- Number of Elements :
- 1
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Terminations :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Finish :
- Tin (Sn)
- Published :
- 2000
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 7.6A, 10V
- Voltage - Rated DC :
- 80V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Height :
- 1.575mm
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Number of Pins :
- 8
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 7.6A
- Width :
- 3.9mm
- Turn-Off Delay Time :
- 34 ns
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2.5W
- Power Dissipation-Max :
- 2.5W Ta
- FET Type :
- N-Channel
- Datasheets
- FDS3580

N-Channel Tape & Reel (TR) 29m Ω @ 7.6A, 10V ±20V 1800pF @ 25V 46nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS3580 Description
The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared with other MOSFET with similar R DS specifications, these MOSFET have faster switching speed and lower gate charge. The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.
FDS3580 Features
7.6 A, 80 V.
RDS(ON ) = 0.029 Ω @ VGS = 10 V
RDS(ON) = 0.033 Ω @ VGS = 6 V.
Low gate charge (34nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
FDS3580 Applications
This product is general usage and suitable for many different applications.
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