FDS3580
- Mfr.Part #
- FDS3580
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 437
- In Stock :
- 437
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A Ta
- Published :
- 2000
- Width :
- 3.9mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mounting Type :
- Surface Mount
- Resistance :
- 29mOhm
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 34 ns
- Current Rating :
- 7.6A
- Series :
- PowerTrench®
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2.5W
- Voltage - Rated DC :
- 80V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Continuous Drain Current (ID) :
- 7.6A
- Length :
- 4.9mm
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 7.6A, 10V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Factory Lead Time :
- 11 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 13 ns
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 2.5W Ta
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Rise Time :
- 8ns
- Number of Pins :
- 8
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.575mm
- Weight :
- 130mg
- Drain to Source Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 16 ns
- Number of Terminations :
- 8
- Datasheets
- FDS3580
FDS3580 Documents

N-Channel Tape & Reel (TR) 29m Ω @ 7.6A, 10V ±20V 1800pF @ 25V 46nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS3580 Description
The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared with other MOSFET with similar R DS specifications, these MOSFET have faster switching speed and lower gate charge. The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.
FDS3580 Features
7.6 A, 80 V.
RDS(ON ) = 0.029 Ω @ VGS = 10 V
RDS(ON) = 0.033 Ω @ VGS = 6 V.
Low gate charge (34nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
FDS3580 Applications
This product is general usage and suitable for many different applications.
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