FDS3170N7
- Mfr.Part #
- FDS3170N7
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 6.7A 8SO
- Stock
- 179
- In Stock :
- 179
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 3W Ta
- JESD-30 Code :
- R-PDSO-G8
- Pin Count :
- 8
- Number of Terminations :
- 8
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 6.7A Ta
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 6.7A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.714pF @ 50V
- Avalanche Energy Rating (Eas) :
- 360 mJ
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- Gull wing
- DS Breakdown Voltage-Min :
- 100V
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 6.7A
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 60A
- Drain-source On Resistance-Max :
- 0.026ohm
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 77nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Qualification Status :
- COMMERCIAL
- JESD-609 Code :
- e4
- Datasheets
- FDS3170N7
FDS3170N7 Documents

N-Channel Tape & Reel (TR) 26m Ω @ 6.7A, 10V ±20V 2.714pF @ 50V 77nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)
FDS3170N7 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 360 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.714pF @ 50V.There is no drain current on this device since the maximum continuous current it can conduct is 6.7A.There is a peak drain current of 60A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
FDS3170N7 Features
the avalanche energy rating (Eas) is 360 mJ
based on its rated peak drain current 60A.
a 100V drain to source voltage (Vdss)
FDS3170N7 Applications
There are a lot of Rochester Electronics, LLC
FDS3170N7 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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