FDS3890

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 40V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

26 ns

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Power - Max :

900mW

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Threshold Voltage :

2.3V

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Current Rating :

4.7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

2

Power Dissipation :

2W

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Resistance :

44mOhm

Voltage :

80V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9mm

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Fall Time (Typ) :

12 ns

Avalanche Energy Rating (Eas) :

175 mJ

Turn On Delay Time :

11 ns

JESD-609 Code :

e3

Current :

47A

Mount :

Surface Mount

Height :

1.575mm

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

2W

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

80V

Published :

2001

Number of Terminations :

8

Terminal Finish :

Tin

Factory Lead Time :

21 Weeks

ECCN Code :

EAR99

Length :

4.9mm

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

8ns

Continuous Drain Current (ID) :

4.7A

FET Type :

2 N-Channel (Dual)

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

44m Ω @ 4.7A, 10V

Mounting Type :

Surface Mount

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V