FDS3812
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- Mfr.Part #
- FDS3812
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 80V 3.4A 8SOIC
- Stock
- 7,237
- In Stock ：
- 7,237
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- FET Type :
- 2 N-Channel (Dual)
- Operating Temperature :
- -55°C~175°C TJ
- FET Feature :
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds :
- 634pF @ 40V
- Series :
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 80V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 74mOhm @ 3.4A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Power - Max :
- 900mW
- Supplier Device Package :
- 8-SOIC
- Datasheets
- FDS3812
FDS3812 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS3812 Description
With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Compared to other MOSFETs with comparable RDS(ON) parameters, these MOSFETs switch more quickly and have a lower gate charge. The end result is a MOSFET that is simple to control and safe to do so (even at extremely high frequencies), as well as DC/DC power supply designs that are more efficient all around.
FDS3812 Features
? quick switching times
? Minimal gate fee (13nC typ)
? Ultra-low RDS with high performance trench technology (ON)
? The capacity to handle large current and power loads
FDS3812 Applications
Switching applications
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