FDN338P

Manufacturer :

UTD Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Rise Time :

11ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

115m Ω @ 1.6A, 4.5V

Published :

2001

Mounting Type :

Surface Mount

Series :

PowerTrench®

Width :

3.05mm

Turn-Off Delay Time :

16 ns

Lead Free :

Lead Free

Factory Lead Time :

10 Weeks

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±8V

Radiation Hardening :

No

Power Dissipation :

500mW

Gate to Source Voltage (Vgs) :

8V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Resistance :

115mOhm

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

451pF @ 10V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Height :

1.22mm

Fall Time (Typ) :

11 ns

Weight :

30mg

Terminal Position :

Dual

Element Configuration :

Single

Power Dissipation-Max :

500mW Ta

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1.6A

Turn On Delay Time :

10 ns

Number of Elements :

1

Drain to Source Voltage (Vdss) :

20V

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Nominal Vgs :

-800 mV

Voltage - Rated DC :

-20V

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Channels :

1

Drain to Source Breakdown Voltage :

-20V

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 4.5V

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Threshold Voltage :

-800mV

Current Rating :

-1.6A