FDN338P

Manufacturer :

UTD Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Current Rating :

-1.6A

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Radiation Hardening :

No

Resistance :

115mOhm

Turn-Off Delay Time :

16 ns

Turn On Delay Time :

10 ns

Contact Plating :

Tin

Continuous Drain Current (ID) :

1.6A

Input Capacitance (Ciss) (Max) @ Vds :

451pF @ 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

REACH SVHC :

No SVHC

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Power Dissipation :

500mW

Height :

1.22mm

Power Dissipation-Max :

500mW Ta

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

11 ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Voltage - Rated DC :

-20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Drain to Source Breakdown Voltage :

-20V

Nominal Vgs :

-800 mV

Number of Pins :

3

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

115m Ω @ 1.6A, 4.5V

Element Configuration :

Single

Mounting Type :

Surface Mount

Series :

PowerTrench®

Weight :

30mg

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Published :

2001

Mount :

Surface Mount

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 4.5V

Width :

3.05mm

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

10 Weeks

Threshold Voltage :

-800mV

RoHS Status :

ROHS3 Compliant

Rise Time :

11ns

Number of Channels :

1