FDN327N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

2A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Turn-Off Delay Time :

14 ns

Drain to Source Breakdown Voltage :

20V

Resistance :

70mOhm

Pbfree Code :

yes

Rise Time :

6.5ns

Width :

1.4mm

Mounting Type :

Surface Mount

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Power Dissipation-Max :

500mW Ta

Voltage - Rated DC :

20V

Factory Lead Time :

10 Weeks

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Height :

1.22mm

Continuous Drain Current (ID) :

2A

Nominal Vgs :

700 mV

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Vgs (Max) :

±8V

Power Dissipation :

500mW

Number of Elements :

1

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Rds On (Max) @ Id, Vgs :

70m Ω @ 2A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Series :

PowerTrench®

Turn On Delay Time :

6 ns

Length :

2.92mm

JESD-609 Code :

e3

Number of Channels :

1

Lead Free :

Lead Free

Terminal Form :

Gull wing

Published :

2017

Transistor Element Material :

SILICON

Current Rating :

2A

Fall Time (Typ) :

6.5 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

2A Ta

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 4.5V

Threshold Voltage :

700mV

Max Junction Temperature (Tj) :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

423pF @ 10V

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Weight :

30mg