FDN308P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

125mOhm

Drain to Source Voltage (Vdss) :

20V

Nominal Vgs :

-1 V

Vgs (Max) :

±12V

Threshold Voltage :

-1V

Weight :

30mg

Number of Elements :

1

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

341pF @ 10V

Mount :

Surface Mount

Factory Lead Time :

10 Weeks

Turn-Off Delay Time :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Published :

2001

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

-20V

Power Dissipation-Max :

500mW Ta

Height :

940μm

Terminal Form :

Gull wing

Rise Time :

10ns

Power Dissipation :

500mW

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Length :

2.92mm

Width :

1.4mm

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Series :

PowerTrench®

Fall Time (Typ) :

10 ns

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

125m Ω @ 1.5A, 4.5V

Continuous Drain Current (ID) :

-1.5A

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Turn On Delay Time :

8 ns

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

-1.5A

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Voltage - Rated DC :

-20V

Element Configuration :

Single

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)