FDN306P
- Mfr.Part #
- FDN306P
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 2.6A SUPERSOT3
- Stock
- 17,836
- In Stock :
- 17,836
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±8V
- Dual Supply Voltage :
- -12V
- Voltage :
- 12V
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Termination :
- SMD/SMT
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- -2.6A
- Supplier Device Package :
- SuperSOT-3
- Power Dissipation-Max :
- 500mW Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Drain to Source Resistance :
- 40mOhm
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 40mOhm @ 2.6A, 4.5V
- Turn On Delay Time :
- 11 ns
- Fall Time (Typ) :
- 10 ns
- Gate to Source Voltage (Vgs) :
- 8V
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A Ta
- Length :
- 2.92mm
- Input Capacitance :
- 1.138nF
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Power Dissipation :
- 500mW
- Mount :
- Surface Mount
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 1138pF @ 6V
- Number of Elements :
- 1
- Factory Lead Time :
- 10 Weeks
- Radiation Hardening :
- No
- Rise Time :
- 10ns
- Height :
- 940μm
- Nominal Vgs :
- -600 mV
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 40mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Rds On Max :
- 40 mΩ
- Threshold Voltage :
- -600mV
- Drain to Source Voltage (Vdss) :
- 12V
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Current :
- 26A
- Element Configuration :
- Single
- Width :
- 1.4mm
- Drain to Source Breakdown Voltage :
- -12V
- Voltage - Rated DC :
- -12V
- Published :
- 2001
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 38 ns
- Mounting Type :
- Surface Mount
- Current Rating :
- -2.6A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- FDN306P
FDN306P Documents

P-Channel Tape & Reel (TR) 40mOhm @ 2.6A, 4.5V ±8V 1138pF @ 6V 17nC @ 4.5V 12V TO-236-3, SC-59, SOT-23-3
FDN306P Description
Fairchild's innovative low voltage PowerTrench technology is used in this FDN306P P-Channel 1.8V specified MOSFET. It's been designed with battery power management in mind.
FDN306P Features
?Quick switching time
?Extremely low RDs with high-performance trench technology (ON)
?In the same footprint, supersOTTM -3 has a lower RDs(ON) and a 30% higher power handling capability than sOT23.
FDN306P Applications
Battery administration
Switch to load
Battery security
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