FDN335N

Manufacturer :

UTD Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

REACH SVHC :

No SVHC

Dual Supply Voltage :

25V

Turn-Off Delay Time :

11 ns

Lead Free :

Lead Free

Current :

17A

Contact Plating :

Tin

Fall Time (Typ) :

8.5 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

70m Ω @ 1.7A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Pbfree Code :

yes

Threshold Voltage :

900mV

Current Rating :

1.7A

Transistor Application :

SWITCHING

Power Dissipation-Max :

500mW Ta

Turn On Delay Time :

5 ns

Length :

2.92mm

Mounting Type :

Surface Mount

Voltage :

20V

Continuous Drain Current (ID) :

1.7A

Terminal Form :

Gull wing

Number of Pins :

3

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Voltage - Rated DC :

20V

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 10V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Element Material :

SILICON

Width :

3.05mm

Operating Temperature :

-55°C~150°C TJ

Resistance :

70mOhm

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Radiation Hardening :

No

Published :

1999

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Manufacturer Package Identifier :

CASE 527AG-01

Power Dissipation :

500mW

JESD-609 Code :

e3

Number of Elements :

1

Number of Terminations :

3

Height :

940μm

Factory Lead Time :

10 Weeks

Nominal Vgs :

800 mV

Rise Time :

8.5ns

Drain to Source Breakdown Voltage :

20V

FET Type :

N-Channel

Element Configuration :

Single