FDN335N

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Mfr.Part #
FDN335N
Manufacturer
UTD Semiconductor
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
SOT-23 MOSFETS ROHS
Stock
1,629
In Stock :
1,629

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Manufacturer :
UTD Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
8.5 ns
Terminal Form :
Gull wing
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 4.5V
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Width :
3.05mm
Transistor Application :
SWITCHING
Voltage :
20V
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Current :
17A
Resistance :
70mOhm
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Radiation Hardening :
No
Operating Mode :
ENHANCEMENT MODE
Length :
2.92mm
Continuous Drain Current (ID) :
1.7A
Mount :
Surface Mount
Factory Lead Time :
10 Weeks
Voltage - Rated DC :
20V
Drain to Source Breakdown Voltage :
20V
Series :
PowerTrench®
Mounting Type :
Surface Mount
Vgs (Max) :
±8V
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
Threshold Voltage :
900mV
Gate to Source Voltage (Vgs) :
8V
Power Dissipation :
500mW
Dual Supply Voltage :
25V
Rds On (Max) @ Id, Vgs :
70m Ω @ 1.7A, 4.5V
Transistor Element Material :
SILICON
Termination :
SMD/SMT
Turn On Delay Time :
5 ns
Contact Plating :
Tin
Turn-Off Delay Time :
11 ns
RoHS Status :
ROHS3 Compliant
Rise Time :
8.5ns
Current - Continuous Drain (Id) @ 25°C :
1.7A Ta
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
310pF @ 10V
Terminal Position :
Dual
ECCN Code :
EAR99
JESD-609 Code :
e3
Height :
940μm
Manufacturer Package Identifier :
CASE 527AG-01
Current Rating :
1.7A
REACH SVHC :
No SVHC
Published :
1999
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Number of Pins :
3
Nominal Vgs :
800 mV
Power Dissipation-Max :
500mW Ta
Package / Case :
TO-236-3, SC-59, SOT-23-3
Pbfree Code :
yes
FET Type :
N-Channel
Datasheets
FDN335N
Introducing Transistors - FETs, MOSFETs - Single UTD Semiconductor FDN335N from Chip IC,where excellence meets affordability. This product stands out with its Voltage:20V, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, FDN335N pinout, FDN335N datasheet PDF, FDN335N amp .Beyond Transistors - FETs, MOSFETs - Single UTD Semiconductor FDN335N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tape & Reel (TR) 70m Ω @ 1.7A, 4.5V ±8V 310pF @ 10V 5nC @ 4.5V TO-236-3, SC-59, SOT-23-3

FDN335N Description


The ONSEMI FDN335N is a 2.5V N-channel MOSFET that employs the innovative PowerTrench? technology, which has been specifically optimised to minimise on-state resistance while maintaining a low gate charge for excellent switching performance.



FDN335N Features


  • 1.7 A, 20 V

  • RDS(on) = 0.07 |@ VGS = 4.5 V

  • RDS(on) = 0.100 | @ VGS = 2.5 V

  • Low gate charge (3.5nC typical).

  • High-performance trench technology for highly low RDS(ON)

  • High power and current handling capability



FDN335N Applications


  • This product is general usage and suitable for many different applications.

  • DC/DC converter

  • Load Switch

 


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