FDN337N
- Mfr.Part #
- FDN337N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.2A SUPERSOT3
- Stock
- 14,838
- In Stock :
- 14,838
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Published :
- 1998
- Number of Pins :
- 3
- Dual Supply Voltage :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- Power Dissipation-Max :
- 500mW Ta
- Number of Channels :
- 1
- Threshold Voltage :
- 700mV
- Length :
- 2.92mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Power Dissipation :
- 500mW
- Vgs (Max) :
- ±8V
- Continuous Drain Current (ID) :
- 2.2A
- Turn On Delay Time :
- 4 ns
- Width :
- 3.05mm
- Max Junction Temperature (Tj) :
- 150°C
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 8V
- Nominal Vgs :
- 700 mV
- Weight :
- 30mg
- Rise Time :
- 10ns
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Mount :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- Drain Current-Max (Abs) (ID) :
- 2A
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 10V
- Turn-Off Delay Time :
- 17 ns
- Fall Time (Typ) :
- 4 ns
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Termination :
- SMD/SMT
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Resistance :
- 65mOhm
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 1.12mm
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 2.2A, 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 2.2A
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDN337N
FDN337N Documents

N-Channel Tape & Reel (TR) 65m Ω @ 2.2A, 4.5V ±8V 300pF @ 10V 9nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN337N Description
FDN337N N-Channel MOSFET was created with a distinctive technology that provides the most efficient RDS(on). FDN337N MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDN337N ON Semiconductor is a general-purpose device and can be used in a variety of applications.
FDN337N Features
High-performance trench technology
Extended VGSS range for battery applications
RoHS compliant
High power and current handling capability
FDN337N Applications
Synchronous & Non-Synchronous Buck
Control Switch
Inverter
Load Switch
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