FDN337N
- Mfr.Part #
- FDN337N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.2A SUPERSOT3
- Stock
- 14,838
- In Stock :
- 14,838
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Turn-Off Delay Time :
- 17 ns
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 2.92mm
- Lead Free :
- Lead Free
- Threshold Voltage :
- 700mV
- Continuous Drain Current (ID) :
- 2.2A
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation-Max :
- 500mW Ta
- Vgs (Max) :
- ±8V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Dual Supply Voltage :
- 30V
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Termination :
- SMD/SMT
- Factory Lead Time :
- 10 Weeks
- Nominal Vgs :
- 700 mV
- Weight :
- 30mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Resistance :
- 65mOhm
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Power Dissipation :
- 500mW
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- Gate to Source Voltage (Vgs) :
- 8V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drain Current-Max (Abs) (ID) :
- 2A
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Fall Time (Typ) :
- 4 ns
- Rise Time :
- 10ns
- Terminal Position :
- Dual
- Height :
- 1.12mm
- Published :
- 1998
- Current Rating :
- 2.2A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 30V
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 2.2A, 4.5V
- Max Junction Temperature (Tj) :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 10V
- Number of Terminations :
- 3
- Turn On Delay Time :
- 4 ns
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 3.05mm
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FDN337N
FDN337N Documents

N-Channel Tape & Reel (TR) 65m Ω @ 2.2A, 4.5V ±8V 300pF @ 10V 9nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN337N Description
FDN337N N-Channel MOSFET was created with a distinctive technology that provides the most efficient RDS(on). FDN337N MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDN337N ON Semiconductor is a general-purpose device and can be used in a variety of applications.
FDN337N Features
High-performance trench technology
Extended VGSS range for battery applications
RoHS compliant
High power and current handling capability
FDN337N Applications
Synchronous & Non-Synchronous Buck
Control Switch
Inverter
Load Switch
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