FDN337N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Height :

1.12mm

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Resistance :

65mOhm

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

700mV

Nominal Vgs :

700 mV

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Width :

3.05mm

Number of Pins :

3

Max Junction Temperature (Tj) :

150°C

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Weight :

30mg

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Number of Channels :

1

Dual Supply Voltage :

30V

ECCN Code :

EAR99

Fall Time (Typ) :

4 ns

Length :

2.92mm

Vgs (Max) :

±8V

Turn On Delay Time :

4 ns

Rise Time :

10ns

Termination :

SMD/SMT

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain Current-Max (Abs) (ID) :

2A

Power Dissipation-Max :

500mW Ta

Qualification Status :

Not Qualified

Terminal Position :

Dual

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

65m Ω @ 2.2A, 4.5V

Element Configuration :

Single

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

2.2A

Contact Plating :

Tin

Published :

1998

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Turn-Off Delay Time :

17 ns

Power Dissipation :

500mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

2.2A