FDN337N
- Mfr.Part #
- FDN337N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.2A SUPERSOT3
- Stock
- 14,838
- In Stock :
- 14,838
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Turn On Delay Time :
- 4 ns
- Number of Channels :
- 1
- Width :
- 3.05mm
- Element Configuration :
- Single
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 17 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 2.2A, 4.5V
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 2A
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 500mW Ta
- Power Dissipation :
- 500mW
- Nominal Vgs :
- 700 mV
- Continuous Drain Current (ID) :
- 2.2A
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Threshold Voltage :
- 700mV
- FET Type :
- N-Channel
- Max Junction Temperature (Tj) :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- Voltage - Rated DC :
- 30V
- Dual Supply Voltage :
- 30V
- Height :
- 1.12mm
- Drain to Source Breakdown Voltage :
- 30V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Termination :
- SMD/SMT
- Vgs (Max) :
- ±8V
- Rise Time :
- 10ns
- Length :
- 2.92mm
- Contact Plating :
- Tin
- Factory Lead Time :
- 10 Weeks
- Weight :
- 30mg
- Resistance :
- 65mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 10V
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 2.2A
- Mount :
- Surface Mount
- Published :
- 1998
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 4 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gate to Source Voltage (Vgs) :
- 8V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDN337N
FDN337N Documents

N-Channel Tape & Reel (TR) 65m Ω @ 2.2A, 4.5V ±8V 300pF @ 10V 9nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN337N Description
FDN337N N-Channel MOSFET was created with a distinctive technology that provides the most efficient RDS(on). FDN337N MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDN337N ON Semiconductor is a general-purpose device and can be used in a variety of applications.
FDN337N Features
High-performance trench technology
Extended VGSS range for battery applications
RoHS compliant
High power and current handling capability
FDN337N Applications
Synchronous & Non-Synchronous Buck
Control Switch
Inverter
Load Switch
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