FDN337N
- Mfr.Part #
- FDN337N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.2A SUPERSOT3
- Stock
- 14,838
- In Stock :
- 14,838
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Contact Plating :
- Tin
- Number of Channels :
- 1
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±8V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Rise Time :
- 10ns
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Threshold Voltage :
- 700mV
- Voltage - Rated DC :
- 30V
- Termination :
- SMD/SMT
- Drain Current-Max (Abs) (ID) :
- 2A
- Power Dissipation-Max :
- 500mW Ta
- Height :
- 1.12mm
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 2.2A, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Turn-Off Delay Time :
- 17 ns
- Current Rating :
- 2.2A
- Weight :
- 30mg
- Length :
- 2.92mm
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 4 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 10 Weeks
- Resistance :
- 65mOhm
- Dual Supply Voltage :
- 30V
- Width :
- 3.05mm
- Drain to Source Breakdown Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 8V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Power Dissipation :
- 500mW
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 10V
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Nominal Vgs :
- 700 mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Turn On Delay Time :
- 4 ns
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 1998
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Continuous Drain Current (ID) :
- 2.2A
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Datasheets
- FDN337N
FDN337N Documents

N-Channel Tape & Reel (TR) 65m Ω @ 2.2A, 4.5V ±8V 300pF @ 10V 9nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN337N Description
FDN337N N-Channel MOSFET was created with a distinctive technology that provides the most efficient RDS(on). FDN337N MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDN337N ON Semiconductor is a general-purpose device and can be used in a variety of applications.
FDN337N Features
High-performance trench technology
Extended VGSS range for battery applications
RoHS compliant
High power and current handling capability
FDN337N Applications
Synchronous & Non-Synchronous Buck
Control Switch
Inverter
Load Switch
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