FDN336P

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Mfr.Part #
FDN336P
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 20V 1.3A SUPERSOT3
Stock
2,920
In Stock :
2,920

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
1.2A
REACH SVHC :
No SVHC
Mounting Type :
Surface Mount
Turn On Delay Time :
7 ns
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 4.5V
Resistance :
200mOhm
Termination :
SMD/SMT
Packaging :
Tape and Reel (TR)
Voltage - Rated DC :
-20V
Mount :
Surface Mount
Terminal Position :
Dual
Power Dissipation :
500mW
Drain to Source Breakdown Voltage :
-20V
Operating Temperature :
-55°C~150°C TJ
Series :
PowerTrench®
Length :
2.92mm
Transistor Element Material :
SILICON
Weight :
30mg
Number of Pins :
3
Turn-Off Delay Time :
16 ns
RoHS Status :
ROHS3 Compliant
Current Rating :
-1.3A
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds :
330pF @ 10V
Nominal Vgs :
-900 mV
Published :
2005
Gate to Source Voltage (Vgs) :
8V
Power Dissipation-Max :
500mW Ta
Element Configuration :
Single
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
200m Ω @ 1.3A, 4.5V
Pbfree Code :
yes
Vgs (Max) :
±8V
Drain to Source Voltage (Vdss) :
20V
Operating Mode :
ENHANCEMENT MODE
Rise Time :
12ns
Number of Terminations :
3
Number of Elements :
1
Lead Free :
Lead Free
FET Type :
P-Channel
Threshold Voltage :
-900mV
Factory Lead Time :
10 Weeks
Height :
940μm
Terminal Form :
Gull wing
Width :
1.4mm
Contact Plating :
Tin
Current - Continuous Drain (Id) @ 25°C :
1.3A Ta
ECCN Code :
EAR99
Package / Case :
TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Fall Time (Typ) :
12 ns
Radiation Hardening :
No
Dual Supply Voltage :
-20V
Datasheets
FDN336P
Introducing Transistors - FETs, MOSFETs - Single onsemi FDN336P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, FDN336P pinout, FDN336P datasheet PDF, FDN336P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDN336P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDN336P


P-Channel Tape & Reel (TR) 200m Ω @ 1.3A, 4.5V ±8V 330pF @ 10V 5nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3

FDN336P Description


FDN336P is a type of P-channel specified PowerTrench? MOSFET provided by ON Semiconductor based on its advanced power trench process which makes this device capable of minimizing on-state resistance and maintaining a low gate charge. It can be widely used for portable electronics applications, including load switching, power management, DC-DC conversion, and more.



FDN336P Features


  • Extremely low RDS(ON)

  • High-performance trench technology

  • Low gate charge

  • Low on-state resistance

  • Available in the SuperSOT?-3 package



FDN336P Applications


  • Load switching

  • DC-DC conversion

  • Power management

  • Battery charging circuits


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