FDN336P
- Mfr.Part #
- FDN336P
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.3A SUPERSOT3
- Stock
- 2,920
- In Stock :
- 2,920
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 1.2A
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 7 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- Resistance :
- 200mOhm
- Termination :
- SMD/SMT
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- -20V
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Power Dissipation :
- 500mW
- Drain to Source Breakdown Voltage :
- -20V
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- PowerTrench®
- Length :
- 2.92mm
- Transistor Element Material :
- SILICON
- Weight :
- 30mg
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 16 ns
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -1.3A
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 330pF @ 10V
- Nominal Vgs :
- -900 mV
- Published :
- 2005
- Gate to Source Voltage (Vgs) :
- 8V
- Power Dissipation-Max :
- 500mW Ta
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 1.3A, 4.5V
- Pbfree Code :
- yes
- Vgs (Max) :
- ±8V
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 12ns
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- FET Type :
- P-Channel
- Threshold Voltage :
- -900mV
- Factory Lead Time :
- 10 Weeks
- Height :
- 940μm
- Terminal Form :
- Gull wing
- Width :
- 1.4mm
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 1.3A Ta
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Fall Time (Typ) :
- 12 ns
- Radiation Hardening :
- No
- Dual Supply Voltage :
- -20V
- Datasheets
- FDN336P

P-Channel Tape & Reel (TR) 200m Ω @ 1.3A, 4.5V ±8V 330pF @ 10V 5nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
FDN336P Description
FDN336P is a type of P-channel specified PowerTrench? MOSFET provided by ON Semiconductor based on its advanced power trench process which makes this device capable of minimizing on-state resistance and maintaining a low gate charge. It can be widely used for portable electronics applications, including load switching, power management, DC-DC conversion, and more.
FDN336P Features
-
Extremely low RDS(ON)
-
High-performance trench technology
-
Low gate charge
-
Low on-state resistance
-
Available in the SuperSOT?-3 package
FDN336P Applications
-
Load switching
-
DC-DC conversion
-
Power management
-
Battery charging circuits
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