FDN336P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2005

Current Rating :

-1.3A

Width :

1.4mm

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Fall Time (Typ) :

12 ns

Operating Mode :

ENHANCEMENT MODE

Resistance :

200mOhm

Threshold Voltage :

-900mV

Length :

2.92mm

Turn-Off Delay Time :

16 ns

Factory Lead Time :

10 Weeks

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

500mW Ta

FET Type :

P-Channel

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Turn On Delay Time :

7 ns

Series :

PowerTrench®

Number of Terminations :

3

Nominal Vgs :

-900 mV

Rise Time :

12ns

Dual Supply Voltage :

-20V

Termination :

SMD/SMT

Radiation Hardening :

No

Vgs (Max) :

±8V

Pbfree Code :

yes

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.3A, 4.5V

Continuous Drain Current (ID) :

1.2A

Transistor Element Material :

SILICON

Number of Pins :

3

Voltage - Rated DC :

-20V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Weight :

30mg

Height :

940μm

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Power Dissipation :

500mW

Drain to Source Breakdown Voltage :

-20V