FDN308P
- Mfr.Part #
- FDN308P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 3,012
- In Stock :
- 3,012
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- -1.5A
- Number of Pins :
- 3
- Threshold Voltage :
- -1V
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 8 ns
- Turn-Off Delay Time :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- ECCN Code :
- EAR99
- Power Dissipation :
- 500mW
- Voltage - Rated DC :
- -20V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vgs (Max) :
- ±12V
- Current Rating :
- -1.5A
- Height :
- 940μm
- FET Type :
- P-Channel
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 500mW Ta
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Series :
- PowerTrench®
- Weight :
- 30mg
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Nominal Vgs :
- -1 V
- Drain to Source Breakdown Voltage :
- -20V
- Drain to Source Voltage (Vdss) :
- 20V
- Width :
- 1.4mm
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2001
- Fall Time (Typ) :
- 10 ns
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 10ns
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Ta
- Gate to Source Voltage (Vgs) :
- 12V
- Input Capacitance (Ciss) (Max) @ Vds :
- 341pF @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Lead Free :
- Lead Free
- Length :
- 2.92mm
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 10 Weeks
- Number of Elements :
- 1
- Resistance :
- 125mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 5.4nC @ 4.5V
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 1.5A, 4.5V
- Datasheets
- FDN308P
FDN308P Documents

P-Channel Tape & Reel (TR) 125m Ω @ 1.5A, 4.5V ±12V 341pF @ 10V 5.4nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
FDN308P Description
FDN308P is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. The robust gate variant of Fairchild's innovative PowerTrench technology is used in this P-Channel 2.5V specified MOSFET. It was designed with a wide variety of gate drive voltages (2.5V – 12V) in mind for power management applications.
FDN308P Features
-
Fast switching speed
-
High performance trench technology for extremely low RDS(ON)
-
SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
-
–20 V, –1.5 A.
FDN308P Applications
-
Power management
-
Load switch
-
Battery protection
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