FDN302P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

2.92mm

Radiation Hardening :

No

Weight :

30mg

Series :

PowerTrench®

Power Dissipation-Max :

500mW Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Nominal Vgs :

-1 V

Factory Lead Time :

10 Weeks

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

500mW

Rds On (Max) @ Id, Vgs :

55m Ω @ 2.4A, 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Operating Mode :

ENHANCEMENT MODE

Height :

940μm

Drain to Source Breakdown Voltage :

-20V

Vgs (Max) :

±12V

JESD-609 Code :

e3

Published :

2000

Transistor Application :

SWITCHING

Termination :

SMD/SMT

Element Configuration :

Single

Terminal Form :

Gull wing

Rise Time :

11ns

ECCN Code :

EAR99

Threshold Voltage :

-1V

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

3

Current Rating :

-2.4A

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Turn On Delay Time :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

882pF @ 10V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

-2.4A

Turn-Off Delay Time :

25 ns

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Fall Time (Typ) :

11 ns

Min Breakdown Voltage :

20V

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Mounting Type :

Surface Mount

Width :

1.4mm

Pbfree Code :

yes

Number of Elements :

1

Resistance :

55mOhm

FET Type :

P-Channel

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Dual Supply Voltage :

-20V

Voltage - Rated DC :

-20V