FDD5N53TM_WS
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- Mfr.Part #
- FDD5N53TM_WS
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 530V 4A DPAK
- Stock
- 15,137
- In Stock ：
- 15,137
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 40W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 2A, 10V
- Fall Time (Typ) :
- 20 ns
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 22ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 640pF @ 25V
- Published :
- 2012
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 4A
- Series :
- UniFET™
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- FET Type :
- N-Channel
- Weight :
- 260.37mg
- Power Dissipation-Max :
- 40W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Breakdown Voltage :
- 530V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 28 ns
- Datasheets
- FDD5N53TM_WS
N-Channel Tape & Reel (TR) 1.5 Ω @ 2A, 10V ±30V 640pF @ 25V 15nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5N53TM_WS Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 640pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.With a drain-source breakdown voltage of 530V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 530V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 28 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
FDD5N53TM_WS Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 530V voltage
the turn-off delay time is 28 ns
FDD5N53TM_WS Applications
There are a lot of ON Semiconductor
FDD5N53TM_WS applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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