FDD5680

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Rise Time :

9ns

Lead Free :

Lead Free

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Number of Terminations :

2

Resistance :

21mOhm

Fall Time (Typ) :

16 ns

Turn-Off Delay Time :

35 ns

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

21m Ω @ 8.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1835pF @ 30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Current Rating :

38A

Continuous Drain Current (ID) :

8.5A

Radiation Hardening :

No

JESD-609 Code :

e3

Element Configuration :

Single

Series :

PowerTrench®

Weight :

260.37mg

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn On Delay Time :

15 ns

Power Dissipation-Max :

2.8W Ta 60W Tc

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Elements :

1

Number of Pins :

3

Mount :

Surface Mount

Power Dissipation :

60W

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Pbfree Code :

yes

ECCN Code :

EAR99

Voltage - Rated DC :

60V

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta