FDD5680

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1835pF @ 30V

Vgs (Max) :

±20V

Power Dissipation-Max :

2.8W Ta 60W Tc

Terminal Form :

Gull wing

Series :

PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

60V

Resistance :

21mOhm

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Rise Time :

9ns

Rds On (Max) @ Id, Vgs :

21m Ω @ 8.5A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Fall Time (Typ) :

16 ns

Number of Pins :

3

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Turn On Delay Time :

15 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Pbfree Code :

yes

Continuous Drain Current (ID) :

8.5A

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Current Rating :

38A

Weight :

260.37mg

Number of Elements :

1

Power Dissipation :

60W

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

60V

Turn-Off Delay Time :

35 ns