FDD5N50FTM
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- Mfr.Part #
- FDD5N50FTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- DPAK
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 3,291
- In Stock ：
- 3,291
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 1.55 Ω
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Rise Time :
- 22ns
- Max Operating Temperature :
- 150°C
- Fall Time (Typ) :
- 20 ns
- Drain to Source Resistance :
- 1.55Ohm
- Number of Pins :
- 3
- Factory Lead Time :
- 9 Weeks
- Continuous Drain Current (ID) :
- 3.5A
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Package / Case :
- DPAK
- Drain to Source Voltage (Vdss) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 40W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 40W
- Turn-Off Delay Time :
- 28 ns
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 500V
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance :
- 650pF
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Weight :
- 260.37mg
- Datasheets
- FDD5N50FTM
Tape & Reel (TR) 500V DPAK
FDD5N50FTM-WS Overview
The drain current is the maximum continuous current the device can conduct, and this device has 3.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28 ns.This device has a drain-to-source resistance of 1.55Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).
FDD5N50FTM-WS Features
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
single MOSFETs transistor is 1.55Ohm
a 500V drain to source voltage (Vdss)
FDD5N50FTM-WS Applications
There are a lot of ON Semiconductor
FDD5N50FTM-WS applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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