FDD5614P
- Mfr.Part #
- FDD5614P
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 15A TO252
- Stock
- 19,083
- In Stock :
- 19,083
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 6.6mm
- Current :
- 15A
- Dual Supply Voltage :
- -60V
- Lifecycle Status :
- ACTIVE (Last Updated: 9 hours ago)
- Resistance :
- 100MOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 759pF @ 30V
- Height :
- 2.39mm
- Voltage :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Continuous Drain Current (ID) :
- -15A
- Pbfree Code :
- yes
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- -1.6V
- Rise Time :
- 10ns
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 19 ns
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 6.73mm
- Mounting Type :
- Surface Mount
- Max Junction Temperature (Tj) :
- 175°C
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 90 mJ
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Terminations :
- 2
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta
- Current Rating :
- -15A
- Element Configuration :
- Single
- Nominal Vgs :
- -1.6 V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- -60V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 42W
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Published :
- 2005
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Weight :
- 4.535924g
- Turn On Delay Time :
- 7 ns
- Number of Elements :
- 1
- Number of Channels :
- 1
- Voltage - Rated DC :
- -60V
- Termination :
- SMD/SMT
- Power Dissipation-Max :
- 3.8W Ta 42W Tc
- Factory Lead Time :
- 8 Weeks
- Fall Time (Typ) :
- 12 ns
- Case Connection :
- DRAIN
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 4.5A, 10V
- Datasheets
- FDD5614P
FDD5614P Documents

P-Channel Tape & Reel (TR) 100m Ω @ 4.5A, 10V ±20V 759pF @ 30V 24nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5614P Description
This 60V P-Channel MOSFET uses ON Semiconductor's high voltage PowerTrench process. It has been optimized for power management applications.
FDD5614P Features
-
Fast switching speed
-
High performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
-
ROHS3 Compliant
-
No SVHC
-
Lead Free
FDD5614P Applications
-
DC/DC converter
-
Power management
-
Load switch
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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