FDD5614P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

100MOhm

Max Junction Temperature (Tj) :

175°C

Mounting Type :

Surface Mount

Number of Terminations :

2

Turn-Off Delay Time :

19 ns

Dual Supply Voltage :

-60V

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

-60V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current Rating :

-15A

Rds On (Max) @ Id, Vgs :

100m Ω @ 4.5A, 10V

Number of Elements :

1

FET Type :

P-Channel

Turn On Delay Time :

7 ns

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Vgs (Max) :

±20V

Power Dissipation :

42W

Threshold Voltage :

-1.6V

Transistor Application :

SWITCHING

Element Configuration :

Single

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

759pF @ 30V

Continuous Drain Current (ID) :

-15A

Lifecycle Status :

ACTIVE (Last Updated: 9 hours ago)

Height :

2.39mm

Avalanche Energy Rating (Eas) :

90 mJ

Current :

15A

Weight :

4.535924g

Series :

PowerTrench®

REACH SVHC :

No SVHC

Length :

6.73mm

Width :

6.6mm

Power Dissipation-Max :

3.8W Ta 42W Tc

Rise Time :

10ns

ECCN Code :

EAR99

Nominal Vgs :

-1.6 V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Published :

2005

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

12 ns

Radiation Hardening :

No

Termination :

SMD/SMT

Transistor Element Material :

SILICON

Voltage - Rated DC :

-60V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Lead Free :

Lead Free