FDD5612
- Mfr.Part #
- FDD5612
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 5.4A TO252-3
- Stock
- 121,099
- In Stock :
- 121,099
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 24 ns
- Vgs (Max) :
- ±20V
- Resistance :
- 64mOhm
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 4 ns
- Height :
- 2.39mm
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 5.4A, 10V
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Termination :
- SMD/SMT
- Voltage - Rated DC :
- 60V
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Threshold Voltage :
- 2.4V
- Lifecycle Status :
- ACTIVE (Last Updated: 9 hours ago)
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Width :
- 6.22mm
- Turn On Delay Time :
- 8 ns
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Length :
- 6.73mm
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 18A
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Published :
- 2016
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 2.4 V
- Dual Supply Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Power Dissipation-Max :
- 3.8W Ta 42W Tc
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Power Dissipation :
- 42W
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 18A
- Weight :
- 260.37mg
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Ta
- Rise Time :
- 4ns
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- FDD5612

N-Channel Tape & Reel (TR) 55m Ω @ 5.4A, 10V ±20V 660pF @ 30V 11nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5612 Description
The FDD5612 is a 60V N-channel PowerTrench? MOSFET that has been specially tailored to minimize the on-state resistance and maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD5612 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.
FDD5612 Features
-
18 A, 60 V
-RDS(ON) = 55 m @ VGS = 10 V
-RDS(ON) = 64 m @ VGS = 6 V
-
Optimized for Use in High-Frequency DC/DC Converters
-
Low Gade Charge
-
Very Fast Switching
-
This Device is Pb?Free and is RoHS Compliant
FDD5612 Applications
-
Aerospace & defense
-
Appliances
-
Building automation
-
Electronic point of sale (EPOS)
-
Factory automation & control
-
Grid infrastructure
-
Industrial transport (non-car & non-light truck)
-
Lighting
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