FDD5612

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Mfr.Part #
FDD5612
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 5.4A TO252-3
Stock
121,099
In Stock :
121,099

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
24 ns
Vgs (Max) :
±20V
Resistance :
64mOhm
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
60V
Lead Free :
Lead Free
Fall Time (Typ) :
4 ns
Height :
2.39mm
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Rds On (Max) @ Id, Vgs :
55m Ω @ 5.4A, 10V
Avalanche Energy Rating (Eas) :
90 mJ
Termination :
SMD/SMT
Voltage - Rated DC :
60V
REACH SVHC :
No SVHC
Element Configuration :
Single
Threshold Voltage :
2.4V
Lifecycle Status :
ACTIVE (Last Updated: 9 hours ago)
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
2
Width :
6.22mm
Turn On Delay Time :
8 ns
Terminal Finish :
Tin (Sn)
Vgs(th) (Max) @ Id :
3V @ 250µA
Length :
6.73mm
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Continuous Drain Current (ID) :
18A
Number of Elements :
1
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Published :
2016
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
660pF @ 30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Nominal Vgs :
2.4 V
Dual Supply Voltage :
60V
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
8 Weeks
Power Dissipation-Max :
3.8W Ta 42W Tc
FET Type :
N-Channel
ECCN Code :
EAR99
Power Dissipation :
42W
Number of Pins :
3
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Series :
PowerTrench®
Packaging :
Tape and Reel (TR)
Current Rating :
18A
Weight :
260.37mg
Terminal Form :
Gull wing
Current - Continuous Drain (Id) @ 25°C :
5.4A Ta
Rise Time :
4ns
JESD-30 Code :
R-PSSO-G2
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
FDD5612
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD5612 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FDD5612 pinout, FDD5612 datasheet PDF, FDD5612 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD5612 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD5612


N-Channel Tape & Reel (TR) 55m Ω @ 5.4A, 10V ±20V 660pF @ 30V 11nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD5612 Description


The FDD5612 is a 60V N-channel PowerTrench? MOSFET that has been specially tailored to minimize the on-state resistance and maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD5612 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. 



FDD5612 Features


  • 18 A, 60 V

   -RDS(ON) = 55 m @ VGS = 10 V

   -RDS(ON) = 64 m @ VGS = 6 V

  • Optimized for Use in High-Frequency DC/DC Converters

  • Low Gade Charge

  • Very Fast Switching

  • This Device is Pb?Free and is RoHS Compliant



FDD5612 Applications


  • Aerospace & defense

  • Appliances

  • Building automation

  • Electronic point of sale (EPOS)

  • Factory automation & control

  • Grid infrastructure

  • Industrial transport (non-car & non-light truck)

  • Lighting


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