FDD5810

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Surface Mount :

yes

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

7.4A Ta 37A Tc

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

7.7A

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.027Ohm

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

72W Tc

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

DS Breakdown Voltage-Min :

60V

Input Capacitance (Ciss) (Max) @ Vds :

1.89pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

22m Ω @ 32A, 10V

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

45 mJ

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e3

FET Type :

N-Channel