FDD5670
- Mfr.Part #
- FDD5670
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 28,640
- In Stock :
- 28,640
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 48A
- Weight :
- 260.37mg
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Width :
- 6.22mm
- Operating Temperature :
- -55°C~175°C TJ
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 52A
- Lifecycle Status :
- ACTIVE (Last Updated: 10 hours ago)
- Turn On Delay Time :
- 20 ns
- Threshold Voltage :
- 2.5V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 60 ns
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 52A Ta
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2739pF @ 15V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Length :
- 6.73mm
- Fall Time (Typ) :
- 24 ns
- Drain to Source Breakdown Voltage :
- 60V
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 10A, 10V
- Current Rating :
- 52A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 83W
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 2.39mm
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Rise Time :
- 12ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2011
- Power Dissipation-Max :
- 3.8W Ta 83W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 10V
- Datasheets
- FDD5670

N-Channel Tape & Reel (TR) 15m Ω @ 10A, 10V ±20V 2739pF @ 15V 73nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5670 Description
FDD5670 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON), and fast switching speed. Extremely low RDS(ON) in a small package.
FDD5670 Features
-
Low gate charge
-
Fast switching
-
High-performance trench technology for extremely low RDS(ON)
-
52 A, 60 V
FDD5670 Applications
-
DC/DC converter
-
Motor drives
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