FDD5612
- Mfr.Part #
- FDD5612
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 121,099
- In Stock :
- 121,099
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 4ns
- Turn On Delay Time :
- 8 ns
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Factory Lead Time :
- 8 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 9 hours ago)
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Current Rating :
- 18A
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 60V
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 5.4A, 10V
- Radiation Hardening :
- No
- Width :
- 6.22mm
- Vgs (Max) :
- ±20V
- Termination :
- SMD/SMT
- Continuous Drain Current (ID) :
- 18A
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 60V
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 24 ns
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Dual Supply Voltage :
- 60V
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Published :
- 2016
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Resistance :
- 64mOhm
- Length :
- 6.73mm
- Nominal Vgs :
- 2.4 V
- Power Dissipation :
- 42W
- Threshold Voltage :
- 2.4V
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 4 ns
- Height :
- 2.39mm
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 3.8W Ta 42W Tc
- Terminal Finish :
- Tin (Sn)
- Weight :
- 260.37mg
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- FDD5612

N-Channel Tape & Reel (TR) 55m Ω @ 5.4A, 10V ±20V 660pF @ 30V 11nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5612 Description
The FDD5612 is a 60V N-channel PowerTrench? MOSFET that has been specially tailored to minimize the on-state resistance and maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD5612 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.
FDD5612 Features
-
18 A, 60 V
-RDS(ON) = 55 m @ VGS = 10 V
-RDS(ON) = 64 m @ VGS = 6 V
-
Optimized for Use in High-Frequency DC/DC Converters
-
Low Gade Charge
-
Very Fast Switching
-
This Device is Pb?Free and is RoHS Compliant
FDD5612 Applications
-
Aerospace & defense
-
Appliances
-
Building automation
-
Electronic point of sale (EPOS)
-
Factory automation & control
-
Grid infrastructure
-
Industrial transport (non-car & non-light truck)
-
Lighting
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