FDD5612
- Mfr.Part #
- FDD5612
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 121,099
- In Stock :
- 121,099
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 4 ns
- Dual Supply Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- Published :
- 2016
- Transistor Element Material :
- SILICON
- Termination :
- SMD/SMT
- Resistance :
- 64mOhm
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Lead Free :
- Lead Free
- Current Rating :
- 18A
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 2.4V
- Continuous Drain Current (ID) :
- 18A
- Weight :
- 260.37mg
- Turn-Off Delay Time :
- 24 ns
- Voltage - Rated DC :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 30V
- Power Dissipation :
- 42W
- Series :
- PowerTrench®
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Length :
- 6.73mm
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Elements :
- 1
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Ta
- Width :
- 6.22mm
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 9 hours ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Drain to Source Breakdown Voltage :
- 60V
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Nominal Vgs :
- 2.4 V
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 3.8W Ta 42W Tc
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 5.4A, 10V
- Rise Time :
- 4ns
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 8 ns
- Height :
- 2.39mm
- Datasheets
- FDD5612

N-Channel Tape & Reel (TR) 55m Ω @ 5.4A, 10V ±20V 660pF @ 30V 11nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5612 Description
The FDD5612 is a 60V N-channel PowerTrench? MOSFET that has been specially tailored to minimize the on-state resistance and maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD5612 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.
FDD5612 Features
-
18 A, 60 V
-RDS(ON) = 55 m @ VGS = 10 V
-RDS(ON) = 64 m @ VGS = 6 V
-
Optimized for Use in High-Frequency DC/DC Converters
-
Low Gade Charge
-
Very Fast Switching
-
This Device is Pb?Free and is RoHS Compliant
FDD5612 Applications
-
Aerospace & defense
-
Appliances
-
Building automation
-
Electronic point of sale (EPOS)
-
Factory automation & control
-
Grid infrastructure
-
Industrial transport (non-car & non-light truck)
-
Lighting
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