FDD5353
- Mfr.Part #
- FDD5353
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 11.5A/50A DPAK
- Stock
- 25,524
- In Stock :
- 25,524
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 8 Weeks
- Length :
- 6.73mm
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Form :
- Gull wing
- Power Dissipation :
- 3.1W
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Width :
- 6.22mm
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 3.1W Ta 69W Tc
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 12.3m Ω @ 10.7A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 hours ago)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Resistance :
- 12.3mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A Ta 50A Tc
- Published :
- 2007
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3215pF @ 30V
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Nominal Vgs :
- 1.8 V
- Weight :
- 260.37mg
- Drain Current-Max (Abs) (ID) :
- 54A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Terminal Finish :
- Tin (Sn)
- Threshold Voltage :
- 1.8V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 11.5A
- Turn-Off Delay Time :
- 36 ns
- Height :
- 2.39mm
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 4 ns
- Rise Time :
- 6ns
- Turn On Delay Time :
- 11 ns
- Datasheets
- FDD5353

N-Channel Tape & Reel (TR) 12.3m Ω @ 10.7A, 10V ±20V 3215pF @ 30V 65nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5353 Description
FDD5353 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The operating temperature of the FDD5353 is -55°C~150°C TJ and its maximum power dissipation is 69W Tc. This N-Channel MOSFET is produced using an advanced Power Trench? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDD5353 Features
-
Max rDS(on) = 12.3mΩ at VGS = 10V, ID = 10.7A
-
Max rDS(on) = 15.4mΩat VGS= 4.5V, ID = 9.5A
-
100% UIL Tested
-
RoHS Compliant
FDD5353 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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