FDD5353

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.73mm

Number of Elements :

1

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Weight :

260.37mg

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

54A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

No SVHC

Series :

PowerTrench®

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

12.3m Ω @ 10.7A, 10V

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 8 hours ago)

Continuous Drain Current (ID) :

11.5A

Element Configuration :

Single

Resistance :

12.3mOhm

Case Connection :

DRAIN

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1.8 V

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

36 ns

JESD-609 Code :

e3

Fall Time (Typ) :

4 ns

Number of Terminations :

2

Rise Time :

6ns

Pbfree Code :

yes

Threshold Voltage :

1.8V

Power Dissipation :

3.1W

Input Capacitance (Ciss) (Max) @ Vds :

3215pF @ 30V

Height :

2.39mm

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Power Dissipation-Max :

3.1W Ta 69W Tc

Transistor Element Material :

SILICON

Width :

6.22mm

Number of Pins :

3

Vgs (Max) :

±20V

Published :

2007

Current - Continuous Drain (Id) @ 25°C :

11.5A Ta 50A Tc

Turn On Delay Time :

11 ns

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

60V